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Open AccessCommunication

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

1
School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK
2
School of Physics, Shandong University, Jinan 250100, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Materials 2017, 10(3), 319; https://doi.org/10.3390/ma10030319
Received: 5 January 2017 / Revised: 28 February 2017 / Accepted: 15 March 2017 / Published: 21 March 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. View Full-Text
Keywords: thin-film transistor; ring oscillators; IGZO; SnO thin-film transistor; ring oscillators; IGZO; SnO
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Zhang, J.; Yang, J.; Li, Y.; Wilson, J.; Ma, X.; Xin, Q.; Song, A. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials 2017, 10, 319.

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