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Materials 2017, 10(3), 236;

Fabrication of p-Type ZnO:N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature

Institute of Modern Physics, Fudan University, Shanghai 200433, China
Author to whom correspondence should be addressed.
Academic Editor: Jiyoung Kim
Received: 1 December 2016 / Revised: 31 January 2017 / Accepted: 8 February 2017 / Published: 27 February 2017
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The oxygen vacancy (VO) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn3N2 films in oxygen plasma and successfully prepared p-type ZnO:N films at temperatures ranging from room temperature to 300 °C. The films were characterized by X-ray diffraction (XRD), non-Rutherford backscattering (non-RBS) spectroscopy, X-ray photoelectron spectroscopy, photoluminescence spectrum, and Hall Effect. The results show that the nitrogen atoms successfully substitute the oxygen sites in the ZnO:N films. The film prepared at room temperature exhibits the highest hole concentration of 6.22 × 1018 cm−3, and the lowest resistivity of 39.47 Ω∙cm. In all ZnO:N films, the VO defects are reduced significantly. At 200 °C, the film holds the lowest value of VO defects and the strongest UV emission. These results imply that oxygen plasma is very efficient in reducing VO defects in p-type ZnO:N films, and could greatly reduce the reaction temperature. This method is significant for the development of ZnO-based optoelectronic devices. View Full-Text
Keywords: p-type ZnO:N films; oxygen vacancy (VO); zinc nitrite (Zn3N2); oxygen plasma p-type ZnO:N films; oxygen vacancy (VO); zinc nitrite (Zn3N2); oxygen plasma

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Jin, Y.; Zhang, N.; Zhang, B. Fabrication of p-Type ZnO:N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature. Materials 2017, 10, 236.

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