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Open AccessArticle

Synthesis of Quantum Dot-ZnS Nanosheet Inorganic Assembly with Low Thermal Fluorescent Quenching for LED Application

Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China
SHINEON Co., LTD., Building 3, No. 58 Jinghai Road, BDA, Beijing 100176, China
Authors to whom correspondence should be addressed.
Materials 2017, 10(11), 1242;
Received: 30 September 2017 / Revised: 17 October 2017 / Accepted: 23 October 2017 / Published: 27 October 2017
(This article belongs to the Section Advanced Composites)
In this report, to tackle the thermal fluorescent quenching issue of II-VI semiconductor quantum dots (QDs), which hinders their on-chip packaging application to light-emitting diodes (LEDs), a QD-ZnS nanosheet inorganic assembly monolith (QD-ZnS NIAM) is developed through chemisorption of QDs on the surface of two-dimensional (2D) ZnS nanosheets and subsequent assembly of the nanosheets into a compact inorganic monolith. The QD-ZnS NIAM could reduce the thermal fluorescent quenching of QDs effectively, possibly due to fewer thermally induced permanent trap states and decreased Förster resonance energy transfer (FRET) among QDs when compared with those in a reference QD composite thin film. We have demonstrated that the QD-ZnS NIAM enables QDs to be directly packaged on-chip in LEDs with over 90% of their initial luminance being retained at above 85 °C, showing advantage in LED application in comparison with conventional QD composite film. View Full-Text
Keywords: quantum dots; nanosheet; assembly; thermal stability quantum dots; nanosheet; assembly; thermal stability
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MDPI and ACS Style

Xie, Y.; Geng, C.; Gao, Y.; Liu, J.G.; Zhang, Z.-H.; Zhang, Y.; Xu, S.; Bi, W. Synthesis of Quantum Dot-ZnS Nanosheet Inorganic Assembly with Low Thermal Fluorescent Quenching for LED Application. Materials 2017, 10, 1242.

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