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Journal: Energies, 2022
Volume: 15
Number: 6169
Article:
MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness
Authors:
by
Jinbing Cheng, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan and Paul K. Chu
Link:
https://www.mdpi.com/1996-1073/15/17/6169
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