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Journal: Energies, 2021
Volume: 14
Number: 2170
Article:
Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress
Authors:
by
Surya Elangovan, Edward Yi Chang and Stone Cheng
Link:
https://www.mdpi.com/1996-1073/14/8/2170
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