Al Taradeh, N.; Frayssinet, E.; Rodriguez, C.; Morancho, F.; Sonneville, C.; Phung, L.-V.; Soltani, A.; Tendille, F.; Cordier, Y.; Maher, H.
Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution. Energies 2021, 14, 4241.
https://doi.org/10.3390/en14144241
AMA Style
Al Taradeh N, Frayssinet E, Rodriguez C, Morancho F, Sonneville C, Phung L-V, Soltani A, Tendille F, Cordier Y, Maher H.
Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution. Energies. 2021; 14(14):4241.
https://doi.org/10.3390/en14144241
Chicago/Turabian Style
Al Taradeh, Nedal, Eric Frayssinet, Christophe Rodriguez, Frederic Morancho, Camille Sonneville, Luong-Viet Phung, Ali Soltani, Florian Tendille, Yvon Cordier, and Hassan Maher.
2021. "Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution" Energies 14, no. 14: 4241.
https://doi.org/10.3390/en14144241
APA Style
Al Taradeh, N., Frayssinet, E., Rodriguez, C., Morancho, F., Sonneville, C., Phung, L.-V., Soltani, A., Tendille, F., Cordier, Y., & Maher, H.
(2021). Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution. Energies, 14(14), 4241.
https://doi.org/10.3390/en14144241
