1. Introduction
Z-source inverter (ZSI) has the capability for buck/boost operation; this unique feature is not available in a traditional Current Source Inverter (CSI) and Voltage Source Inverter (VSI). Regardless of this unique feature, Z-source inverter has some curtailments such as lower voltage gain, discontinuous current, and high voltage stresses across the switches [
1,
2,
3]. In the previous literature, several topologies in the form of Quasi Z-Source Inverter (QZSI), Neutral Point Clamped Z-Source Inverter (NPCZSI), and Neutral Point Clamped Quasi Z-Source (NPCQZSI) Inverter were presented to overcome these limitations. For instance, a voltage doubler, in conjunction with an isolation transformer, was utilized in [
4] for quasi ZSI for distributed generation applications. Although the topology ensures the continuity in the input current, it offers a limited boosting ability. Theoretical results for four topologies of QZSI inverter having less element count and simplified control techniques were presented in [
5,
6]. The topologies ensure a continuous current without including a major advancement in boosting ability and voltage stresses across switches. A traditional ZSI integrated with a bridge rectifier was proposed in [
7] for adjustable speed drive applications. A QZSI was proposed in [
8] that included two inductors, two capacitors, and one diode in the QZS network. This topology offers continuity in the input current, however, with the same boosting ability as that of the traditional ZSI. To increase the modulation index range with the continuity in current, a switched inductor QZSI was proposed in [
9]. No drastic increase in the boost factor of the inverter was observed. By utilizing a predictive control method, a grid-connected closed-loop QZSI topology was introduced [
10] that claimed an improvement in the inverter performance with the same boosting ability as that of traditional ZSI and high voltage stresses across switches. Similarly, different ZS networks integrated with VSI and CSI were investigated in [
11]. These are indeed different topologies with the same boost factor as that of traditional ZSI. To make a smoother DC input current, a family of embedded ZSI was suggested with the traditional boosting ability and high stresses across switches [
12]. In all the aforementioned references, improvement in boosting ability is still a challenge.
In [
13,
14], a three-level NPCZSI was proposed that deployed the two conventional impedance sources that included four capacitors and four inductors with two separate dc sources. This proposed topology of the inverter provides an additional state (0 V) in the output voltage to yield the staircase waveform and reduces the harmonic distortion in output voltage. Due to the deployment of two separate impedance sources, the design of this topology becomes very bulky; additionally, the voltage gain of the inverter does not increase too much. This limitation was addressed in [
15], where a single impedance source was deputed with the NPCI to reduce the cost and volume of the inverter while retaining all the advantages of the previous topology.
To achieve the optimal results from NPCZSI in the form of enhanced output voltage, waveform quality, and boosting ability, a detailed comparison between two modulation techniques, Phase Disposition Sinusoidal Pulse Width Modulation (PDSPWM) and Phase Opposite Disposition Sinusoidal Pulse Width Modulation (PODSPWM) were analyzed in [
16]. A continuous model was suggested in [
17] to balance the voltage between two capacitors in NPCI. Instead of standard inductors, the use of coupled transformers was introduced in [
18] to enhance the voltage gain ability of NPCZSI by adjusting the turns ratio of transformers. It also overcomes the dependence on modulation index, and hence, makes the stresses lower across switches. However, with this topology, a colossal rise in voltage gain is restricted due to the shoot-through duty ratio and turns ratio of coupled transformers affecting each other. Said constraint is addressed in [
19] by modifying the impedance network with the deployment of coupled inductors. A Coupled Quasi Z-Source Inverter (CQZSI) is suggested in [
20] to diminish the input current ripples. A single-phase five-level hybrid NPCI was proposed in [
21], which integrated the NPCI with an H-bridge inverter. The proposed inverter contends the accomplishment to lower the total harmonic distortion (THD) through the Selective Harmonic Elimination (SHE) technique.
An NPCI, with a Z-source, that was composed of two diodes, two inductors, two switches, and two capacitors was suggested in [
22] that acquired all the benefits of QZSI and provided the three-level output voltages, but due to its lower voltage gain ability, it was not an appropriate choice where a higher boost was required. In [
23], two topologies named Diode Assisted QZSI and Capacitor Assisted QZSI were proposed, which were extendable, but the repetition of a greater number of units increased the size of the inverter and made it bulky. From the invention of ZSI [
24], a lot of attempts have been made to ameliorate this topology to accomplish the optimal benefits from it, but a small voltage gain, lower value of modulation index, and higher voltage stress are still present in previous topologies suggested in the literature.
This research work introduces a new topology for ZSI that overcomes the drawbacks such as lower boosting ability, utilization of higher shoot-through duty ratio, lesser availability of modulation index, and higher voltage stresses across switches of the previous topologies. This topology offers a remarkable boosting ability and provides a high voltage gain by utilizing a lower shoot-through ratio to make available a higher modulation index and keeps the lower stress across switches.
The paper is organized in the following way. The proposed inverter topology is presented in
Section 2, with its complete working modes of operation. A detailed mathematical analysis is performed in
Section 3.
Section 4 covers the PWM technique, and the Boost Control Method applied to the proposed topology. Simulations and results are provided in
Section 5, whereas
Section 6 presents a detailed comparison with the previous topologies.
Section 7 includes the conclusion.
2. The Proposed Inverter Topology
The schematic diagram of the proposed inverter topology, which can enhance the applied DC voltage to the desired level and transform it into a three-phase three-level output, is illustrated in
Figure 1. The applied DC voltage can be procured from a DC battery or some other DC source such as a fuel cell or PV applications.
The inverter is configured with two symmetrical impedance networks, where each network is comprised of two inductors, two capacitors, four diodes, and one active switch to provide the numerous advantages over the conventional inverters. Two alike dc sources are utilized to energize these networks. The conventional NPCI [
25] can operate only in two types of states, active-states, and zero-states. However, the proposed inverter includes one more state of operation that is a Shoot Through (ST) state (that allows all switches to turn on at a time).
2.1. Active State
Here, the DC voltage applied to the inverter is exposed to the three-phase AC load after conversion to a three-phase three-level AC, at the desired level. In this mode of operation, or voltage appear at the poles of the inverter.
To achieve
, diodes
and
operate in the conduction mode and
and
remain in the nonconduction mode;
and
come in series. DC source
and both inductors
and
of the upper impedance network energize the capacitor
. The direction of the current is shown in the equivalent circuit of the active state in
Figure 2. In the active state, the current adopts the two paths, one from voltage source
to inductor
, diode
, inductor
, diode
, and capacitor
, and completes its path through
. In this path, capacitor
is charged by voltage source
and by inductors
and
, while in the second path, the current approaches to ac load after passing through
,
,
,
,
(where
K =
R,
Y,
B) and completes its path through the load to neutral point
N and back to
.
To achieve
, diodes
and
are in conduction mode, while
and
remain in nonconduction mode. DC source voltage
and both inductors
and
of lower impedance network energize the capacitor
. The direction of the flow of current is shown in the equivalent circuit of the active state in
Figure 2. In the active state, the current follows the two paths, one from voltage source
to capacitor
through
and completes its path after passing through inductor
, diode
, and inductor
. In this path, the capacitor is charged by voltage source
and by inductors
and
. In the second path, the current approaches to AC load after passing through
and
(where
K =
R,
Y,
B), and completes its path through the inductor
L2N, diode
, inductor
, and back to
. In the active state, both active switches (
and
) remain in off state and play no role.
2.2. Zero-State
During the zero-state of operation, no voltage appears across the load terminals. In the zero-state, two intermediate switches of each leg of the inverter are in on state, whereas the topmost and lowermost switch of each leg of the inverter remains in the off state. During this mode of operation, the diodes and are in the conduction mode, while and remain in the nonconduction mode. DC source and both inductors and of the upper impedance network energize the capacitor . Similarly, for the lower network, the diodes and are in conduction mode, while and remain in nonconduction mode and DC source and both inductors and of lower impedance network energize the capacitor .
The direction of the flow of current in the equivalent circuit of zero-state is shown in
Figure 3, where it traverses voltage source
, inductor
, diode
, inductor
, and capacitor
and reaches back to
through diode
. In this path, capacitor
is charged by
and by both inductors
and
. Similarly, for the lower network capacitor,
is charged by
and by the combination of
and
, no power is transferred to load. Like in the active state, both
and
remain in off state.
2.3. Shoot-Through (ST) State
In ST state, active switches, along with all switches of one or more legs of an inverter, go to on state simultaneously, which elicits 0 V across the load (see
Figure 4). Seven different approaches that are summarized in
Table 1 can be adopted to attain this state.
On closing the active switches, inductors and come in parallel in the upper impedance network and turns diodes , , and in reverse bias mode. Similarly, and come in parallel in the lower impedance network and configure diodes , , and in reverse bias mode. In ST state, and capacitor charge inductors and ; similarly, in the lower network, and capacitor charge inductors and .
The span of the ST state is limited up to the premises of zero-state and is maximum when it occupies the time duration of the zero-state. This state enables the inverter to perform the buck/boost operation. Thus, by choosing its appropriate value, desired results can be achieved.
5. Simulations Results and Discussion
For solid validation of proposed topology, the inverter is simulated with a detailed switching model in discrete time simulations by using the SimPowerSystems toolbox in MATLAB/Simulink, where the conducting and switching losses are considered for the components used in the impedance network and the main inverter circuit. All the simulation results have a strong agreement with the theoretical results. The details of all components and parameters used in the simulation model for the proposed inverter topology are provided in
Table 2 and
Table 3.
The proposed topology outperforms the previous techniques and provides an excellent boosting capacity at a very low ST duty ratio with the high modulation index.
Table 4 shows the values of the boosting factor against the different values of the ST duty ratio and modulation index.
Detailed simulation results are presented from
Figure 8,
Figure 9,
Figure 10,
Figure 11,
Figure 12 and
Figure 13. The simulation model is designed for
= 0.2855291 and
= 0.825, and it offers a boost factor of 8.96, which is the same as the theoretical analysis (see (33)). The proposed inverter provides the 343 V pole voltages against the 40 V DC input voltage. The pole voltages are shown in
Figure 8.
From (21) and (24), the voltage across capacitors
and
are the same as the pole voltages, having values of 343 V, and the same results are depicted in
Figure 9. This ensures the agreement between the mathematically-calculated and simulation results. The voltages across both capacitors are well balanced.
The waveforms for the inductor currents
,
,
, and
are shown in
Figure 10.
Line voltage and phase voltage are shown in
Figure 11 and
Figure 12, respectively. Line voltages are the difference of the pole voltages having a value of 687 V as depicted in the simulation results. Line voltages and phase voltages (the voltages between the phase and neutral points of star-connected load) are interrelated as:
A star-connected resistive load having a resistance of 250 Ω per phase is deployed at the output of the inverter. The waveforms of phase currents are shown in
Figure 13, that are in-phase with the voltage, thus improving the power quality.
All the simulation results are identical to the theoretical analysis performed for the inverter.
6. Comparison with Previous Topologies
Different parameters, i.e., boosting ability, modulation index, duration of ST duty ratio, and voltage stress across switches, are considered for the comparative analysis purposes to show the effectiveness of the proposed topology. A lot of improvements in the aforementioned parameters offered by the proposed topology are found over the previous topologies.
Figure 14 compares the boost factor versus modulation index for the proposed and the previous topologies, which indicates that the boost factor of the proposed topology is much higher than that of the previous topologies for the same values of modulation index. The proposed inverter is capable of exhibiting higher boosting ability even at larger values of modulation index.
In addition, the proposed topology is most appropriate to achieve a higher boost factor by utilizing a smaller value of
D with a wide range of modulation index.
Figure 15 shows a relationship of boost factor versus the ST duty ratio for the proposed and the previous topologies. It can be seen that the proposed topology offers better results, even with smaller values of the ST duty ratio. Thus, this topology can be deployed in applications where higher boost is required with a smaller ST duty ratio.
The proposed topology also shows a remarkable boosting ability with lower voltage stress across the switches.
Figure 16 shows a graph between stress across switches and voltage gain, for the proposed topology and the previous topologies, indicating that the proposed topology offers much better results. It enables the availability of higher boost without increasing the stress much. Lowering in switching voltage stresses leads to the reduction of the rating of switches and the size of inverter.
Figure 17 depicts the voltage gain versus the ST duty ratio, which indicates the superiority of proposed topology over the previous topologies in terms of higher voltage gain with lower values of shoot-through duty ratio.
Figure 18 demonstrates the relationship between boost factor and voltage gain and exhibits that the proposed topology offers the higher voltage gain against the appropriate value of boost factor due to the availability of higher modulation index, whereas, with previous topologies, significantly lower voltage gain can be achieved from the given boost factor. It can be seen from the graph that with the proposed topology, the values of voltage gain are near the corresponding values of the boost factor.
In
Figure 19, a graph is plotted between
BVin/
GVin versus the voltage gain, showing clearly that the proposed topology offers better results as compared to previous topologies.
The simulation results ensure the superiority of the proposed inverter topology over the existing ones. These simulation results can easily be translated into mathematical relations.
In a nutshell, mathematically speaking, a detailed comparison of all such parameters is shown in
Table 5. On taking any combination of the input parameters, the output parameters (column 1 of
Table 5) are found improved for the proposed topology over the existing ones, just like the simulation results.
Efficiency analysis of the proposed inverter topology is also performed and compared with the previous topologies.
Table 6 shows the values of components/parameters used for the analysis. For comparison purposes, they are assumed to be the same for all the topologies. For the simplicity of efficiency analysis, the power losses across the inductors, capacitors, diodes, and active switches (where applicable) due to parasitic resistance of inductors and capacitors, the forward voltage drop of diodes, and on-resistance of active switches are considered.
Table 7 shows the equivalent circuits during the NST and ST state of the topologies to be compared. Correspondingly, the power losses that occur across the inductors, capacitors, diodes, and active switches (where applicable) during NST and ST were calculated by utilizing the technique given in [
33,
34], Expressions of U series (U
1, U
2, U
3, and U
4), V series (V
1, V
2, V
3, and V
4), W series (W
1, W
2, W
3 and W
4), and Z series (Z
3, Z
4) in
Table 7 show the power losses across the inductors, capacitors, diodes, and active switches during NST and ST state, respectively.
The efficiency of each topology against the overall voltage gain is computed. As can be observed from
Figure 20, efficiency curves of all considered topologies are comparable with one another with a minor difference. The proposed topology offers more than 90% efficiency with a voltage gain of up to 10. With this level of efficiency, it offers several advantages in the form of higher boosting ability, lesser voltage stresses across the switches, lower shoot-through duty ratio, availability of higher modulation index, and improved quality of output waveform by reducing the THD. The reduction in voltage stresses across the switches ensures the utilization of lower rating components/devices even for a higher voltage gain, whereas in the previous topologies, the stresses across the devices drastically increase as the voltage gain increases, as depicted in
Figure 16. This situation demands an enormous increase in the rating of components/devices used in previous topologies of the inverter, which leads to a tremendous increase in the cost of components/devices and the size of the inverter, which makes it bulky.
To extend our discussion further, by utilizing
Table 5 and
Figure 16,
Figure 17,
Figure 18,
Figure 19 and
Figure 20, a detailed comparison of the proposed inverter topology with the previous inverter topologies in terms of overall efficiency, stresses across switches, rating of components/devices, cost, and size is performed and depicted in
Figure 21, for a voltage gain of 10 (this voltage is taken as a sample, although the analysis for other values is also true).
It is clear from the comparison that the proposed topology is more feasible for the practical applications as compared to the previous topologies, especially when more voltage gain and boosting ability are required and when cost, size, and lower rating of components are the main concerns. Since the proposed topology belongs to the ZSI family, it finds its applications where all other ZSI are applicable, such as in variable speed drive systems, grid-connected photovoltaic systems, distributed generation systems, hybrid electric vehicles, laminators, conveyor belts, and so on [
35,
36,
37].