Efthymiou, L.; Camuso, G.; Longobardi, G.; Chien, T.; Chen, M.; Udrea, F.
On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies 2017, 10, 407.
https://doi.org/10.3390/en10030407
AMA Style
Efthymiou L, Camuso G, Longobardi G, Chien T, Chen M, Udrea F.
On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies. 2017; 10(3):407.
https://doi.org/10.3390/en10030407
Chicago/Turabian Style
Efthymiou, Loizos, Gianluca Camuso, Giorgia Longobardi, Terry Chien, Max Chen, and Florin Udrea.
2017. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs" Energies 10, no. 3: 407.
https://doi.org/10.3390/en10030407
APA Style
Efthymiou, L., Camuso, G., Longobardi, G., Chien, T., Chen, M., & Udrea, F.
(2017). On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. Energies, 10(3), 407.
https://doi.org/10.3390/en10030407