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Sensors 2009, 9(12), 9734-9740;

Low Magnetic Field Detection Using a CuPt Nano Structure Made on a SiO2/Si Structure

Electrical Engineering Department Shahid Beheshti University, Tehran, Iran
Department of Physics Islamic Azad University Qom branch, Qom Payam Noor University, Iran
Electronic Research Center, Tehran, Iran
Author to whom correspondence should be addressed.
Received: 3 November 2009 / Revised: 19 November 2009 / Accepted: 25 November 2009 / Published: 2 December 2009
(This article belongs to the Special Issue ISFET Sensors)
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A Si/SiO2/CuPt structure is formed by depositing a very thin SiO2 layer between CuPt and P-type Si layers using e-beam evaporation. SEM images show the formation of CuPt nano clusters with an average size of less than 100 nm. This structure shows high sensitivity to applied magnetic fields at 77K and at low and high dc voltages such that magnetic field as low as 6 mT is detected using I-V and I-B measurements. The variation of current with various magnetic field strength at the constant voltage shows also an oscillatory behavior. The sensitivity of this structure to magnetic fields is believed to be due to small nano size of the platinum–copper structures as well as their discrete energy states and the tunneling of carriers into the insulating layer. Our results indicate that this structure may be a good candidate for small, simple, low cost and sensitive low magnetic field detectors. View Full-Text
Keywords: Cu-Pt nano clusters; I-V Curve; magnetic field detection Cu-Pt nano clusters; I-V Curve; magnetic field detection
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Hajghassem, H.; Banihashemian, S.M.; Aliahmadi, M. Low Magnetic Field Detection Using a CuPt Nano Structure Made on a SiO2/Si Structure. Sensors 2009, 9, 9734-9740.

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