An Integrated ISFET Sensor Array
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
Sensors 2009, 9(11), 8831-8851; https://doi.org/10.3390/s91108831
Received: 5 August 2009 / Revised: 30 September 2009 / Accepted: 16 October 2009 / Published: 4 November 2009
(This article belongs to the Special Issue ISFET Sensors)
AbstractA monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs. View Full-Text
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Nakazato, K. An Integrated ISFET Sensor Array. Sensors 2009, 9, 8831-8851.
Nakazato K. An Integrated ISFET Sensor Array. Sensors. 2009; 9(11):8831-8851.Chicago/Turabian Style
Nakazato, Kazuo. 2009. "An Integrated ISFET Sensor Array." Sensors 9, no. 11: 8831-8851.
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