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Tung NH, Lee H, Dinh DK, Kim D-W, Lee JY, Eom GW, Kim H-U, Kang WS. Enhancing Si₃N₄ Selectivity over SiO₂ in Low-RF Power NF₃–O₂ Reactive Ion Etching: The Effect of NO Surface Reaction. Sensors. 2024; 24(10):3089. https://doi.org/10.3390/s24103089

Tung, Nguyen Hoang, Heesoo Lee, Duy Khoe Dinh, Dae-Woong Kim, Jin Young Lee, Geon Woong Eom, Hyeong-U Kim, and Woo Seok Kang. 2024. "Enhancing Si₃N₄ Selectivity over SiO₂ in Low-RF Power NF₃–O₂ Reactive Ion Etching: The Effect of NO Surface Reaction" Sensors 24, no. 10: 3089. https://doi.org/10.3390/s24103089

Tung, N. H., Lee, H., Dinh, D. K., Kim, D.-W., Lee, J. Y., Eom, G. W., Kim, H.-U., & Kang, W. S. (2024). Enhancing Si₃N₄ Selectivity over SiO₂ in Low-RF Power NF₃–O₂ Reactive Ion Etching: The Effect of NO Surface Reaction. Sensors, 24(10), 3089. https://doi.org/10.3390/s24103089