Yu, Z.; Han, X.; Xu, J.; Chen, C.; Qu, X.; Liu, B.; Sun, Z.; Sun, T.
The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device. Sensors 2023, 23, 3480.
https://doi.org/10.3390/s23073480
AMA Style
Yu Z, Han X, Xu J, Chen C, Qu X, Liu B, Sun Z, Sun T.
The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device. Sensors. 2023; 23(7):3480.
https://doi.org/10.3390/s23073480
Chicago/Turabian Style
Yu, Zhiqiang, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, and Tangyou Sun.
2023. "The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device" Sensors 23, no. 7: 3480.
https://doi.org/10.3390/s23073480
APA Style
Yu, Z., Han, X., Xu, J., Chen, C., Qu, X., Liu, B., Sun, Z., & Sun, T.
(2023). The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device. Sensors, 23(7), 3480.
https://doi.org/10.3390/s23073480