Article Versions Notes

Armalytė S, Glemža J, Jonkus V, Pralgauskaitė S, Matukas J, Pūkienė S, Zelioli A, Dudutienė E, Naujokaitis A, Bičiūnas A, et al. Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes. Sensors. 2023; 23(4):2282. https://doi.org/10.3390/s23042282

Armalytė, Simona, Justinas Glemža, Vytautas Jonkus, Sandra Pralgauskaitė, Jonas Matukas, Simona Pūkienė, Andrea Zelioli, Evelina Dudutienė, Arnas Naujokaitis, Andrius Bičiūnas, and et al. 2023. "Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes" Sensors 23, no. 4: 2282. https://doi.org/10.3390/s23042282

Armalytė, S., Glemža, J., Jonkus, V., Pralgauskaitė, S., Matukas, J., Pūkienė, S., Zelioli, A., Dudutienė, E., Naujokaitis, A., Bičiūnas, A., Čechavičius, B., & Butkutė, R. (2023). Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes. Sensors, 23(4), 2282. https://doi.org/10.3390/s23042282