Article Versions Notes

Naskar N, Schneidereit MF, Huber F, Chakrabortty S, Veith L, Mezger M, Kirste L, Fuchs T, Diemant T, Weil T, et al. Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells. Sensors. 2020; 20(15):4179. https://doi.org/10.3390/s20154179

Naskar, Nilanjon, Martin F. Schneidereit, Florian Huber, Sabyasachi Chakrabortty, Lothar Veith, Markus Mezger, Lutz Kirste, Theo Fuchs, Thomas Diemant, Tanja Weil, and et al. 2020. "Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells" Sensors 20, no. 15: 4179. https://doi.org/10.3390/s20154179

Naskar, N., Schneidereit, M. F., Huber, F., Chakrabortty, S., Veith, L., Mezger, M., Kirste, L., Fuchs, T., Diemant, T., Weil, T., Behm, R. J., Thonke, K., & Scholz, F. (2020). Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells. Sensors, 20(15), 4179. https://doi.org/10.3390/s20154179