Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells
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Naskar, N.; Schneidereit, M.F.; Huber, F.; Chakrabortty, S.; Veith, L.; Mezger, M.; Kirste, L.; Fuchs, T.; Diemant, T.; Weil, T.; Behm, R.J.; Thonke, K.; Scholz, F. Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells. Sensors 2020, 20, 4179. https://doi.org/10.3390/s20154179
Naskar N, Schneidereit MF, Huber F, Chakrabortty S, Veith L, Mezger M, Kirste L, Fuchs T, Diemant T, Weil T, Behm RJ, Thonke K, Scholz F. Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells. Sensors. 2020; 20(15):4179. https://doi.org/10.3390/s20154179
Chicago/Turabian StyleNaskar, Nilanjon, Martin F. Schneidereit, Florian Huber, Sabyasachi Chakrabortty, Lothar Veith, Markus Mezger, Lutz Kirste, Theo Fuchs, Thomas Diemant, Tanja Weil, R. J. Behm, Klaus Thonke, and Ferdinand Scholz. 2020. "Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells" Sensors 20, no. 15: 4179. https://doi.org/10.3390/s20154179