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Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits

Department of Semiconductor Science, Dongguk University, Seoul 04620, Korea
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Sensors 2020, 20(13), 3649; https://doi.org/10.3390/s20133649
Received: 12 May 2020 / Revised: 10 June 2020 / Accepted: 28 June 2020 / Published: 29 June 2020
(This article belongs to the Special Issue CMOS Image Sensors and Related Applications)
In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To detect the edges of images in the CIS, neighboring column data are compared in in-column memories after column-parallel analog-to-digital conversion with the proposed mask. The proposed built-in mask circuits are implemented in the CIS without a complex image signal processer to obtain edge images with high speed and low power consumption. According to the measurement results, edge images were successfully obtained with a maximum frame rate of 60 fps. A prototype sensor with 1920 × 1440 resolution was fabricated with a 90-nm 1-poly 5-metal CIS process. The area of the 4-shared 4T-active pixel sensor was 1.4 × 1.4 µm2, and the chip size was 5.15 × 5.15 mm2. The total power consumption was 9.4 mW at 60 fps with supply voltages of 3.3 V (analog), 2.8 V (pixel), and 1.2 V (digital). View Full-Text
Keywords: CMOS image sensor; computer vision; edge detection; low power consumption; single-slope ADC CMOS image sensor; computer vision; edge detection; low power consumption; single-slope ADC
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Jin, M.; Noh, H.; Song, M.; Kim, S.Y. Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits. Sensors 2020, 20, 3649.

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