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Open AccessArticle

Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

1
Division of Computer and Electronic Systems Engineering, Hankuk University of Foreign Studies, Yongin 17035, Korea
2
Department of Computer and Information Security, Sejong University, Seoul 05006, Korea
*
Author to whom correspondence should be addressed.
Sensors 2020, 20(10), 2952; https://doi.org/10.3390/s20102952
Received: 27 March 2020 / Revised: 19 May 2020 / Accepted: 20 May 2020 / Published: 22 May 2020
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits in checking the excessive increase in errors, a complementary method should be considered for the reliability of flash storage devices. In this paper, we propose a scheme based on lossless data compression that enhances the error recovery ability of flash storage devices, which applies to improve recovery capability both of inside and outside the page. Within a page, ECC encoding is realized on compressed data by the adaptive ECC module, which results in a reduced code rate. From the perspective of outside the page, the compressed data are not placed at the beginning of the page, but rather is placed at a specific location within the page, which makes it possible to skip certain pages during the recovery phase. As a result, the proposed scheme improves the uncorrectable bit error rate (UBER) of the legacy system. View Full-Text
Keywords: NAND flash memory; P/E cycle; compression; adaptive ECC; RAID scattering; stripe log; parity NAND flash memory; P/E cycle; compression; adaptive ECC; RAID scattering; stripe log; parity
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Lim, S.-H.; Park, K.-W. Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices. Sensors 2020, 20, 2952.

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