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Open AccessArticle

Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

by 1,2,†, 1,2,†, 1,2,*, 1,2, 1,2 and 1,2
1
Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China
2
Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China
*
Author to whom correspondence should be addressed.
Qianqian Guo and Fei Lu contributed equally to this work.
Sensors 2019, 19(2), 224; https://doi.org/10.3390/s19020224
Received: 19 November 2018 / Revised: 29 December 2018 / Accepted: 4 January 2019 / Published: 9 January 2019
(This article belongs to the Special Issue Semiconductor and CMOS-Based Sensors for Environmental Monitoring)
High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively. View Full-Text
Keywords: high-temperature; Schottky diodes; Al2O3; a-IGZO high-temperature; Schottky diodes; Al2O3; a-IGZO
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MDPI and ACS Style

Guo, Q.; Lu, F.; Tan, Q.; Zhou, T.; Xiong, J.; Zhang, W. Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing. Sensors 2019, 19, 224.

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