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Sensors 2019, 19(2), 224; https://doi.org/10.3390/s19020224

Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

1,2,†
,
1,2,†
,
1,2,* , 1,2
,
1,2
and
1,2
1
Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China
2
Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China
Qianqian Guo and Fei Lu contributed equally to this work.
*
Author to whom correspondence should be addressed.
Received: 19 November 2018 / Revised: 29 December 2018 / Accepted: 4 January 2019 / Published: 9 January 2019
(This article belongs to the Special Issue Semiconductor and CMOS-Based Sensors for Environmental Monitoring)
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Abstract

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively. View Full-Text
Keywords: high-temperature; Schottky diodes; Al2O3; a-IGZO high-temperature; Schottky diodes; Al2O3; a-IGZO
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Guo, Q.; Lu, F.; Tan, Q.; Zhou, T.; Xiong, J.; Zhang, W. Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing. Sensors 2019, 19, 224.

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