Next Article in Journal
Preflight Contingency Planning Approach for Fixed Wing UAVs with Engine Failure in the Presence of Winds
Next Article in Special Issue
Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation
Previous Article in Journal
Minimum Cost Deployment of Bistatic Radar Sensor for Perimeter Barrier Coverage
Previous Article in Special Issue
Gas Sensing with Iridium Oxide Nanoparticle Decorated Carbon Nanotubes
Open AccessArticle

Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

by 1,2,†, 1,2,†, 1,2,*, 1,2, 1,2 and 1,2
Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China
Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China
Author to whom correspondence should be addressed.
Qianqian Guo and Fei Lu contributed equally to this work.
Sensors 2019, 19(2), 224;
Received: 19 November 2018 / Revised: 29 December 2018 / Accepted: 4 January 2019 / Published: 9 January 2019
(This article belongs to the Special Issue Semiconductor and CMOS-Based Sensors for Environmental Monitoring)
High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively. View Full-Text
Keywords: high-temperature; Schottky diodes; Al2O3; a-IGZO high-temperature; Schottky diodes; Al2O3; a-IGZO
Show Figures

Figure 1

MDPI and ACS Style

Guo, Q.; Lu, F.; Tan, Q.; Zhou, T.; Xiong, J.; Zhang, W. Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing. Sensors 2019, 19, 224.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map

Back to TopTop