Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure
School of Energy and Power Engineering, Beihang University, Beijing 100191, China
National Key Laboratory of Science and Technology on Aero Engine Aero-Thermodynamics, Beijing 100191, China
The Collaborative Innovation Center for Advanced Aero-Engines of China, Beijing 100191, China
Author to whom correspondence should be addressed.
Received: 28 June 2019 / Revised: 8 August 2019 / Accepted: 9 August 2019 / Published: 12 August 2019
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High-precision, low-temperature-sensitive microelectromechanical system (MEMS) capacitive accelerometers are widely used in aerospace, automotive, and navigation systems. An analytical study of the temperature drift of bias (TDB) and temperature drift of scale factor (TDSF) for an asymmetric comb capacitive accelerometer is presented in this paper. A five-layer model is established for the equivalent expansion ratio in the TDB and TDSF formulas, and the results calculated by the weighted average of thickness and elasticity modulus method are closest to the results of the numerical simulation. The analytical formulas of TDB and TDSF for an asymmetric structure are obtained. For an asymmetric structure, TDB is only related to thermal deformation and fabrication error. Additionally, half of the fixed electrode distance is not included in the expressions of
for asymmetric structures, thus resulting in the TDSF of the asymmetric structure being smaller compared to a symmetric structure with the same structural parameters. The TDSF of the symmetric structure is [−200.2 ppm/°C, −261.6 ppm/°C], while the results of the asymmetric structure are [−11.004 ppm/°C, −72.404 ppm/°C] under the same set of parameters. The parameters of the optimal asymmetric structure are obtained for fabrication guidance using numerical methods. In the experiment, the TDSF and TDB of the packaged structure and the non-packaged structure are compared, and a significant effect of the package on the signal output is found. The TDB is reduced from 3000 to 60 μg/°C, while the TDSF is reduced from 3000 to 140 ppm/°C.
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Li, H.; Zhai, Y.; Tao, Z.; Gui, Y.; Tan, X. Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure. Sensors 2019, 19, 3522.
Li H, Zhai Y, Tao Z, Gui Y, Tan X. Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure. Sensors. 2019; 19(16):3522.
Li, Haiwang; Zhai, Yanxin; Tao, Zhi; Gui, Yingxuan; Tan, Xiao. 2019. "Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure." Sensors 19, no. 16: 3522.
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