Next Article in Journal
Real-Time Water Surface Object Detection Based on Improved Faster R-CNN
Previous Article in Journal
Hydrogel Microdomain Encapsulation of Stable Functionalized Silver Nanoparticles for SERS pH and Urea Sensing
Open AccessArticle

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

1,2,3, 1,2,3, 1,2,3, 1,2,3 and 1,2,3,*
1
School of Energy and Power Engineering, Beihang University, Beijing 100191, China
2
National Key Laboratory of Science and Technology on Aero Engine Aero-Thermodynamics, Beijing 100191, China
3
The Collaborative Innovation Center for Advanced Aero-Engines of China, Beijing 100191, China
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(16), 3522; https://doi.org/10.3390/s19163522
Received: 28 June 2019 / Revised: 8 August 2019 / Accepted: 9 August 2019 / Published: 12 August 2019
(This article belongs to the Section Physical Sensors)
  |  
PDF [12288 KB, uploaded 13 August 2019]
  |     |  

Abstract

High-precision, low-temperature-sensitive microelectromechanical system (MEMS) capacitive accelerometers are widely used in aerospace, automotive, and navigation systems. An analytical study of the temperature drift of bias (TDB) and temperature drift of scale factor (TDSF) for an asymmetric comb capacitive accelerometer is presented in this paper. A five-layer model is established for the equivalent expansion ratio in the TDB and TDSF formulas, and the results calculated by the weighted average of thickness and elasticity modulus method are closest to the results of the numerical simulation. The analytical formulas of TDB and TDSF for an asymmetric structure are obtained. For an asymmetric structure, TDB is only related to thermal deformation and fabrication error. Additionally, half of the fixed electrode distance is not included in the expressions of Δ d and Δ D for asymmetric structures, thus resulting in the TDSF of the asymmetric structure being smaller compared to a symmetric structure with the same structural parameters. The TDSF of the symmetric structure is [−200.2 ppm/°C, −261.6 ppm/°C], while the results of the asymmetric structure are [−11.004 ppm/°C, −72.404 ppm/°C] under the same set of parameters. The parameters of the optimal asymmetric structure are obtained for fabrication guidance using numerical methods. In the experiment, the TDSF and TDB of the packaged structure and the non-packaged structure are compared, and a significant effect of the package on the signal output is found. The TDB is reduced from 3000 to 60 μg/°C, while the TDSF is reduced from 3000 to 140 ppm/°C. View Full-Text
Keywords: MEMS; capacitive accelerometer; asymmetric structure; equivalent expansion ratio MEMS; capacitive accelerometer; asymmetric structure; equivalent expansion ratio
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Li, H.; Zhai, Y.; Tao, Z.; Gui, Y.; Tan, X. Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure. Sensors 2019, 19, 3522.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top