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Open AccessArticle

A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Department of Electrical Engineering, École de technologie supérieure, Montréal, QC H3C 1K3, Canada
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Author to whom correspondence should be addressed.
Sensors 2019, 19(12), 2680; https://doi.org/10.3390/s19122680
Received: 27 April 2019 / Revised: 8 June 2019 / Accepted: 11 June 2019 / Published: 13 June 2019
(This article belongs to the Special Issue MEMS Sensors and Resonators)
This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm. View Full-Text
Keywords: MEMS-based oscillator; transimpedance amplifier; electrostatic actuation; phase noise; Lamé-mode MEMS resonator; input-referred noise; quality factor; 1-dB compression point MEMS-based oscillator; transimpedance amplifier; electrostatic actuation; phase noise; Lamé-mode MEMS resonator; input-referred noise; quality factor; 1-dB compression point
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Bouchami, A.; Elsayed, M.Y.; Nabki, F. A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator. Sensors 2019, 19, 2680.

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