Next Article in Journal
High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors
Previous Article in Journal
Edge-Aware Unidirectional Total Variation Model for Stripe Non-Uniformity Correction
Article Menu
Issue 4 (April) cover image

Export Article

Open AccessArticle
Sensors 2018, 18(4), 1165; https://doi.org/10.3390/s18041165

A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor

1,2,†
,
3,†
,
1,2,* , 1,2
,
1,2
,
1,2
,
1,2
,
1,2
and
4
1
University of Chinese Academy of Sciences, Beijing 100049, China
2
Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China
3
Tsinghua University, Beijing 100084, China
4
Affiliated High School of Peking University, Beijing 100080, China
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Received: 24 February 2018 / Revised: 7 April 2018 / Accepted: 9 April 2018 / Published: 11 April 2018
(This article belongs to the Section Physical Sensors)
Full-Text   |   PDF [8344 KB, uploaded 3 May 2018]   |  

Abstract

This paper presents an electrochemical seismic sensor in which paraylene was used as a substrate and insulating layer of micro-fabricated electrodes, enabling the detection of seismic signals with enhanced sensitivities in comparison to silicon-based counterparts. Based on microfabrication, paralene-based electrochemical seismic sensors were fabricated in which the thickness of the insulating spacer was 6.7 μm. Compared to silicon-based counterparts with ~100 μm insulating layers, the parylene-based devices produced higher sensitivities of 490.3 ± 6.1 V/(m/s) vs. 192.2 ± 1.9 V/(m/s) at 0.1 Hz, 4764.4 ± 18 V/(m/s) vs. 318.9 ± 6.5 V/(m/s) at 1 Hz, and 4128.1 ± 38.3 V/(m/s) vs. 254.5 ± 4.2 V/(m/s) at 10 Hz. In addition, the outputs of the parylene vs. silicon devices in response to two transit inputs were compared, producing peak responses of 2.97 V vs. 0.22 V and 2.41 V vs. 0.19 V, respectively. Furthermore, the self-noises of parylene vs. silicon-based devices were compared as follows: −82.3 ± 3.9 dB vs. −90.4 ± 9.4 dB at 0.1 Hz, −75.7 ± 7.3 dB vs. −98.2 ± 9.9 dB at 1 Hz, and −62.4 ± 7.7 dB vs. −91.1 ± 8.1 dB at 10 Hz. The developed parylene-based electrochemical seismic sensors may function as an enabling technique for further detection of seismic motions in various applications. View Full-Text
Keywords: electrochemical seismic sensor; parylene substrate; sensitivity increasing; noise level electrochemical seismic sensor; parylene substrate; sensitivity increasing; noise level
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Li, G.; Sun, Z.; Wang, J.; Chen, D.; Chen, J.; Chen, L.; Xu, C.; Qi, W.; Zheng, Y. A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor. Sensors 2018, 18, 1165.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top