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Sensors 2018, 18(2), 667; https://doi.org/10.3390/s18020667

Second Generation Small Pixel Technology Using Hybrid Bond Stacking

OmniVision Technologies, Inc., Santa Clara, CA 95054, USA
This paper is an extended version of our paper published in Venezia, V.C.; Shih, C.; Yang,W.-Z.; Zang, Y.; Lin, Z.; Grant, L.A.; Rhodes, H. 1.0 m pixel improvements with hybrid bond stacking technology. In Proceedings of the International Image Sensor Workshop, Hiroshima, Japan, 30 May–2 June 2017; pp. 8–11.
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Received: 2 November 2017 / Revised: 26 January 2018 / Accepted: 13 February 2018 / Published: 24 February 2018
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
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Abstract

In this work, OmniVision’s second generation (Gen2) of small-pixel BSI stacking technologies is reviewed. The key features of this technology are hybrid-bond stacking, deeper back-side, deep-trench isolation, new back-side composite metal-oxide grid, and improved gate oxide quality. This Gen2 technology achieves state-of-the-art low-light image-sensor performance for 1.1, 1.0, and 0.9 µm pixel products. Additional improvements on this technology include less than 100 ppm white-pixel process and a high near-infrared (NIR) QE technology. View Full-Text
Keywords: CIS; BSI; stacked; hybrid-bond; 1.0 µm; 0.9 µm; NIR CIS; BSI; stacked; hybrid-bond; 1.0 µm; 0.9 µm; NIR
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Venezia, V.C.; Hsiung, A.C.-W.; Yang, W.-Z.; Zhang, Y.; Zhao, C.; Lin, Z.; Grant, L.A. Second Generation Small Pixel Technology Using Hybrid Bond Stacking. Sensors 2018, 18, 667.

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