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Open AccessArticle

Second Generation Small Pixel Technology Using Hybrid Bond Stacking

OmniVision Technologies, Inc., Santa Clara, CA 95054, USA
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This paper is an extended version of our paper published in Venezia, V.C.; Shih, C.; Yang,W.-Z.; Zang, Y.; Lin, Z.; Grant, L.A.; Rhodes, H. 1.0 m pixel improvements with hybrid bond stacking technology. In Proceedings of the International Image Sensor Workshop, Hiroshima, Japan, 30 May–2 June 2017; pp. 8–11.
Sensors 2018, 18(2), 667; https://doi.org/10.3390/s18020667
Received: 2 November 2017 / Revised: 26 January 2018 / Accepted: 13 February 2018 / Published: 24 February 2018
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
In this work, OmniVision’s second generation (Gen2) of small-pixel BSI stacking technologies is reviewed. The key features of this technology are hybrid-bond stacking, deeper back-side, deep-trench isolation, new back-side composite metal-oxide grid, and improved gate oxide quality. This Gen2 technology achieves state-of-the-art low-light image-sensor performance for 1.1, 1.0, and 0.9 µm pixel products. Additional improvements on this technology include less than 100 ppm white-pixel process and a high near-infrared (NIR) QE technology. View Full-Text
Keywords: CIS; BSI; stacked; hybrid-bond; 1.0 µm; 0.9 µm; NIR CIS; BSI; stacked; hybrid-bond; 1.0 µm; 0.9 µm; NIR
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Venezia, V.C.; Hsiung, A.C.-W.; Yang, W.-Z.; Zhang, Y.; Zhao, C.; Lin, Z.; Grant, L.A. Second Generation Small Pixel Technology Using Hybrid Bond Stacking. Sensors 2018, 18, 667.

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