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Journal: Sensors, 2018
Volume: 18
Number: 3760
3760
Article: InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions
Authors: by Vilius Palenskis, Linas Minkevičius, Jonas Matukas, Domas Jokubauskis, Sandra Pralgauskaitė, Dalius Seliuta, Bronislovas Čechavičius, Renata Butkutė and Gintaras Valušis
Link: https://www.mdpi.com/1424-8220/18/11/3760

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