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Sensors 2017, 17(9), 1962; https://doi.org/10.3390/s17091962

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

1
Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
2
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720, USA
Gyu-Seob Jeong and Woorham Bae contributed equally to this work.
*
Author to whom correspondence should be addressed.
Received: 27 June 2017 / Revised: 17 August 2017 / Accepted: 22 August 2017 / Published: 25 August 2017
(This article belongs to the Special Issue Silicon Technologies for Photonic Sensors)

Abstract

The bandwidth requirement of wireline communications has increased exponentially because of the ever-increasing demand for data centers and high-performance computing systems. However, it becomes difficult to satisfy the requirement with legacy electrical links which suffer from frequency-dependent losses due to skin effects, dielectric losses, channel reflections, and crosstalk, resulting in a severe bandwidth limitation. In order to overcome this challenge, it is necessary to introduce optical communication technology, which has been mainly used for long-reach communications, such as long-haul networks and metropolitan area networks, to the medium- and short-reach communication systems. However, there still remain important issues to be resolved to facilitate the adoption of the optical technologies. The most critical challenges are the energy efficiency and the cost competitiveness as compared to the legacy copper-based electrical communications. One possible solution is silicon photonics which has long been investigated by a number of research groups. Despite inherent incompatibility of silicon with the photonic world, silicon photonics is promising and is the only solution that can leverage the mature complementary metal-oxide-semiconductor (CMOS) technologies. Silicon photonics can be utilized in not only wireline communications but also countless sensor applications. This paper introduces a brief review of silicon photonics first and subsequently describes the history, overview, and categorization of the CMOS IC technology for high-speed photo-detection without enumerating the complex circuital expressions and terminologies. View Full-Text
Keywords: CMOS; integrated circuit; photodetector; silicon photonics; transimpedance amplifier CMOS; integrated circuit; photodetector; silicon photonics; transimpedance amplifier
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Jeong, G.-S.; Bae, W.; Jeong, D.-K. Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection. Sensors 2017, 17, 1962.

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