Next Article in Journal
Lifetime Maximization via Hole Alleviation in IoT Enabling Heterogeneous Wireless Sensor Networks
Previous Article in Journal
Classification of Alzheimer’s Patients through Ubiquitous Computing
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Sensors
Volume 17
Issue 7
10.3390/s17071684
sensors-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

by
Chang-Ju Lee
,
Chul-Ho Won
,
Jung-Hee Lee
,
Sung-Ho Hahm
and
Hongsik Park
*
School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea
*
Author to whom correspondence should be addressed.
Sensors 2017, 17(7), 1684; https://doi.org/10.3390/s17071684
Submission received: 7 June 2017 / Revised: 14 July 2017 / Accepted: 19 July 2017 / Published: 21 July 2017
(This article belongs to the Section Physical Sensors)
Browse Figures
Versions Notes

Abstract

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.
Keywords: gallium nitride (GaN); ultraviolet (UV); photodetector; UV-to-visible rejection ratio; step-graded AlxGa1−xN buffer layer gallium nitride (GaN); ultraviolet (UV); photodetector; UV-to-visible rejection ratio; step-graded AlxGa1−xN buffer layer

Share and Cite

MDPI and ACS Style

Lee, C.-J.; Won, C.-H.; Lee, J.-H.; Hahm, S.-H.; Park, H. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer. Sensors 2017, 17, 1684. https://doi.org/10.3390/s17071684

AMA Style

Lee C-J, Won C-H, Lee J-H, Hahm S-H, Park H. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer. Sensors. 2017; 17(7):1684. https://doi.org/10.3390/s17071684

Chicago/Turabian Style

Lee, Chang-Ju, Chul-Ho Won, Jung-Hee Lee, Sung-Ho Hahm, and Hongsik Park. 2017. "Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer" Sensors 17, no. 7: 1684. https://doi.org/10.3390/s17071684

APA Style

Lee, C.-J., Won, C.-H., Lee, J.-H., Hahm, S.-H., & Park, H. (2017). Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer. Sensors, 17(7), 1684. https://doi.org/10.3390/s17071684

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop