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Sensors 2016, 16(8), 1286;

A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, USA
School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 19 May 2016 / Revised: 17 July 2016 / Accepted: 20 July 2016 / Published: 13 August 2016
(This article belongs to the Section Physical Sensors)
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This paper presents a piezoresistive pressure sensor with a shield layer for improved stability. Compared with the conventional piezoresistive pressure sensors, the new one reported in this paper has an n-type shield layer that covers p-type piezoresistors. This shield layer aims to minimize the impact of electrical field and reduce the temperature sensitivity of piezoresistors. The proposed sensors have been successfully fabricated by bulk-micromachining techniques. A sensitivity of 0.022 mV/V/kPa and a maximum non-linearity of 0.085% FS are obtained in a pressure range of 1 MPa. After numerical simulation, the role of the shield layer has been experimentally investigated. It is demonstrated that the shield layer is able to reduce the drift caused by electrical field and ambient temperature variation. View Full-Text
Keywords: silicon pressure sensor; shield layer; stability silicon pressure sensor; shield layer; stability

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Cao, G.; Wang, X.; Xu, Y.; Liu, S. A Micromachined Piezoresistive Pressure Sensor with a Shield Layer. Sensors 2016, 16, 1286.

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