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Sensors 2016, 16(6), 853;

Dispersion of Heat Flux Sensors Manufactured in Silicon Technology

Institute of Electronics, Microelectronics and Nanotechnology, University Lille 1 and CNRS; Villeneuve d’Ascq, 59652, France
Author to whom correspondence should be addressed.
Academic Editor: Stefano Mariani
Received: 25 April 2016 / Revised: 31 May 2016 / Accepted: 3 June 2016 / Published: 9 June 2016
(This article belongs to the Collection Modeling, Testing and Reliability Issues in MEMS Engineering)
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In this paper, we focus on the dispersion performances related to the manufacturing process of heat flux sensors realized in CMOS (Complementary metal oxide semi-conductor) compatible 3-in technology. In particular, we have studied the performance dispersion of our sensors and linked these to the physical characteristics of dispersion of the materials used. This information is mandatory to ensure low-cost manufacturing and especially to reduce production rejects during the fabrication process. The results obtained show that the measured sensitivity of the sensors is in the range 3.15 to 6.56 μV/(W/m2), associated with measured resistances ranging from 485 to 675 kΩ. The dispersions correspond to a Gaussian-type distribution with more than 90% determined around average sensitivity S e ¯ = 4.5 µV/(W/m2) and electrical resistance R ¯ = 573.5 kΩ within the interval between the average and, more or less, twice the relative standard deviation. View Full-Text
Keywords: silicon; sensor; CMOS; heat flux; thermoelectric; dispersion silicon; sensor; CMOS; heat flux; thermoelectric; dispersion

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Ziouche, K.; Lejeune, P.; Bougrioua, Z.; Leclercq, D. Dispersion of Heat Flux Sensors Manufactured in Silicon Technology. Sensors 2016, 16, 853.

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