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Sensors 2016, 16(3), 369;

Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Center of Electron Microscopy, Zhejiang University, Hangzhou 310027, China
Authors to whom correspondence should be addressed.
Academic Editor: Ki-Hyun Kim
Received: 5 January 2016 / Revised: 5 February 2016 / Accepted: 6 February 2016 / Published: 14 March 2016
(This article belongs to the Special Issue The Use of New and/or Improved Materials for Sensing Applications)
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Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures. View Full-Text
Keywords: solid electrolyte; ionic conductivity; YSZ; bismuth oxide solid electrolyte; ionic conductivity; YSZ; bismuth oxide

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Liu, L.; Zhou, Z.; Tian, H.; Li, J. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia. Sensors 2016, 16, 369.

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