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Sensors 2015, 15(9), 23640-23652;

Design and Simulation Test of an Open D-Dot Voltage Sensor

1,* , 2,†
State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China
Maintenance Branch of State Grid Chongqing Electric Power Company, Chongqing 400039, China
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 10 July 2015 / Revised: 12 September 2015 / Accepted: 14 September 2015 / Published: 17 September 2015
(This article belongs to the Section Physical Sensors)
Full-Text   |   PDF [3009 KB, uploaded 17 September 2015]   |  


Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation. View Full-Text
Keywords: noncontact; Maxwell; open-ended; D-dot voltage sensor noncontact; Maxwell; open-ended; D-dot voltage sensor

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Bai, Y.; Wang, J.; Wei, G.; Yang, Y. Design and Simulation Test of an Open D-Dot Voltage Sensor. Sensors 2015, 15, 23640-23652.

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