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Sensors 2015, 15(3), 5429-5473;

Simulations of Operation Dynamics of Different Type GaN Particle Sensors

Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M.N. Passaro
Received: 13 January 2015 / Revised: 25 February 2015 / Accepted: 26 February 2015 / Published: 5 March 2015
(This article belongs to the Section Physical Sensors)
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The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material. View Full-Text
Keywords: GaN; multiplication; impact ionization; carrier lifetime GaN; multiplication; impact ionization; carrier lifetime

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Gaubas, E.; Ceponis, T.; Kalesinskas, V.; Pavlov, J.; Vysniauskas, J. Simulations of Operation Dynamics of Different Type GaN Particle Sensors. Sensors 2015, 15, 5429-5473.

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