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Sensors 2014, 14(8), 13999-14020;

One-Dimensional Nanostructure Field-Effect Sensors for Gas Detection

Key Laboratory of UV Light Emitting Materials and Technology under Ministry of Education, Northeast Normal University, Changchun 130024, China
These authors contributed equally to this work.
Authors to whom correspondence should be addressed.
Received: 18 June 2014 / Revised: 29 June 2014 / Accepted: 15 July 2014 / Published: 31 July 2014
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. Micro/nanoscaled field-effect sensors combine the advantages of 1D nanostructures and the characteristic of field modulation. 1D nanostructures provide a large surface area-volume ratio; which is an outstanding advantage for gas sensors with high sensitivity and fast response. In addition; the nature of the single crystals is favorable for the studies of the response mechanism. On the other hand; one main merit of the field-effect sensors is to provide an extra gate electrode to realize the current modulation; so that the sensitivity can be dramatically enhanced by changing the conductivity when operating the sensors in the subthreshold regime. This article reviews the recent developments in the field of 1D nanostructure FET for gas detection. The sensor configuration; the performance as well as their sensing mechanism are evaluated. View Full-Text
Keywords: gas sensors; one-dimensional nanostructures; semiconductor; field-effect transistor gas sensors; one-dimensional nanostructures; semiconductor; field-effect transistor

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Zhao, X.; Cai, B.; Tang, Q.; Tong, Y.; Liu, Y. One-Dimensional Nanostructure Field-Effect Sensors for Gas Detection. Sensors 2014, 14, 13999-14020.

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