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Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Laboratory Electronique, Informatique et Image, Le2i UMR CNRS 6306, Aile de l'ingénieur-9, Avenue Alain Savary-BP 47870, Dijon Cedex 21078, France
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Sensors 2014, 14(12), 22773-22784; https://doi.org/10.3390/s141222773
Received: 10 October 2014 / Revised: 14 November 2014 / Accepted: 17 November 2014 / Published: 1 December 2014
(This article belongs to the Section Physical Sensors)
Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD. View Full-Text
Keywords: etectors; avalanche photodiodes (APDs); optoelectronics; photonic integrated circuit; integrated optoelectronic circuits etectors; avalanche photodiodes (APDs); optoelectronics; photonic integrated circuit; integrated optoelectronic circuits
MDPI and ACS Style

Jradi, K.; Pellion, D.; Ginhac, D. Design, Characterization and Analysis of a 0.35 μm CMOS SPAD. Sensors 2014, 14, 22773-22784.

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