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Enhanced Responsivity of Photodetectors Realized via Impact Ionization

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
Author to whom correspondence should be addressed.
Sensors 2012, 12(2), 1280-1287;
Received: 20 December 2011 / Revised: 14 January 2012 / Accepted: 17 January 2012 / Published: 31 January 2012
(This article belongs to the Section Physical Sensors)
To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors. View Full-Text
Keywords: photodetector; responsivity; impact ionization photodetector; responsivity; impact ionization
MDPI and ACS Style

Yu, J.; Shan, C.-X.; Qiao, Q.; Xie, X.-H.; Wang, S.-P.; Zhang, Z.-Z.; Shen, D.-Z. Enhanced Responsivity of Photodetectors Realized via Impact Ionization. Sensors 2012, 12, 1280-1287.

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