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Open AccessArticle

Using an SU-8 Photoresist Structure and Cytochrome C Thin Film Sensing Material for a Microbolometer

Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Roosevelt Road, Section 4, Taipei 106, Taiwan
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Sensors 2012, 12(12), 16390-16403; https://doi.org/10.3390/s121216390
Received: 8 November 2012 / Revised: 20 November 2012 / Accepted: 21 November 2012 / Published: 27 November 2012
(This article belongs to the Section Physical Sensors)
There are two critical parameters for microbolometers: the temperature coefficient of resistance (TCR) of the sensing material, and the thermal conductance of the insulation structure. Cytochrome c protein, having a high TCR, is a good candidate for infrared detection. We can use SU-8 photoresist for the thermal insulation structure, given its low thermal conductance. In this study, we designed a platform structure based on a SU-8 photoresist. We fabricated an infrared sensing pixel and recorded a high TCR for this new structure. The SU-8 photoresist insulation structure was fabricated using the exposure dose method. We experimentally demonstrated high values of TCR from 22%/K to 25.7%/K, and the measured noise was 1.2 × 10–8 V2/Hz at 60 Hz. When the bias current was 2 μA, the calculated voltage responsivity was 1.16 × 105 V/W. This study presents a new kind of microbolometer based on cytochrome c protein on top of an SU-8 photoresist platform that does not require expensive vacuum deposition equipment. View Full-Text
Keywords: cytochrome c; temperature coefficient of resistance (TCR); SU-8; microbolometer; exposure dose method cytochrome c; temperature coefficient of resistance (TCR); SU-8; microbolometer; exposure dose method
MDPI and ACS Style

Lai, J.-L.; Liao, C.-J.; Su, G.-D.J. Using an SU-8 Photoresist Structure and Cytochrome C Thin Film Sensing Material for a Microbolometer. Sensors 2012, 12, 16390-16403.

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