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Open AccessArticle

High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

Mechanical Engineering Department, University of Alberta, Edmonton, AB, T6G 2G8, Canada
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, T6G 2V4, Canada
Author to whom correspondence should be addressed.
Sensors 2011, 11(2), 1819-1846;
Received: 9 December 2010 / Revised: 18 January 2011 / Accepted: 20 January 2011 / Published: 31 January 2011
(This article belongs to the Section Physical Sensors)
This paper presents the experimental evaluation of a new piezoresistive MEMS strain sensor. Geometric characteristics of the sensor silicon carrier have been employed to improve the sensor sensitivity. Surface features or trenches have been introduced in the vicinity of the sensing elements. These features create stress concentration regions (SCRs) and as a result, the strain/stress field was altered. The improved sensing sensitivity compensated for the signal loss. The feasibility of this methodology was proved in a previous work using Finite Element Analysis (FEA). This paper provides the experimental part of the previous study. The experiments covered a temperature range from −50 °C to +50 °C. The MEMS sensors are fabricated using five different doping concentrations. FEA is also utilized to investigate the effect of material properties and layer thickness of the bonding adhesive on the sensor response. The experimental findings are compared to the simulation results to guide selection of bonding adhesive and installation procedure. Finally, FEA was used to analyze the effect of rotational/alignment errors. View Full-Text
Keywords: strain sensor; piezoresistive; MEMS; silicon strain sensor; piezoresistive; MEMS; silicon
MDPI and ACS Style

Mohammed, A.A.S.; Moussa, W.A.; Lou, E. High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity. Sensors 2011, 11, 1819-1846.

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