Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

Round 1

Reviewer 1 Report

Recommendation: Minor Revision

The manuscript entitled “Metal-Organic Frameworks Based Memristors: Materials, Devices, and Applications” presents employing of metal-organic frameworks in micro-nano devices as neuromorphic computing based on memristors.

After careful consideration, I concluded the presented manuscript has focused on the interesting and neglected aspect of the MOF area.  The manuscript can be published after minor revision. I can provide some of the important comments as minor revisions as follows:  

Comment 1: Please add a contents section on the front page of the manuscript.

Comment 2: Please add an Abbreviation section on the front page of the manuscript

Comment 3: Please improve the resolution of the Figures.

Comment 4: One of the important parameters in the fabrication of thin films is controlling the morphology, thickness, nucleation, and growth of crystals. All of these parameters can be controlled by electrochemical synthesis and deposition techniques in MOF areas such as anodic electrodeposition, cathodic electrodeposition, bipolar deposition, electrochemically assisted self-assembly technique, and convergent and divergent paired electrodeposition methods. I would like to suggest that these techniques mentioned as MOF synthesis methods or Outlooks sections by following references: 10.1002/celc.201402429,  10.1038/s41598-019-50390-y,

Comment 5: I would like to suggest that compare the advantages and disadvantages of MOF-based memristors and Other-based memristors in a Table or distinguished section.

Comment 6: One of the important parameters in the fabrication of MOF-based memristor systems is the conductivity of MOF films. One of the solutions is using bi-metallic MOFs instead of mono-metallic MOFs.  I would like to suggest that these materials be mentioned and introduced as MOF synthesis methods or Outlooks sections by following references:  10.1016/j.microc.2021.106229,  10.1016/j.est.2022.105381,

Comment 7: Please add a suitable graphical abstract to the manuscript.

Author Response

To Reviewer:

Thank you very much for reviewing our manuscript. We have revised our manuscript based on your valuable suggestions and comments. We would like to express our appreciation in advance for your reviewing our revised manuscript. We hope that you will find your suggestions and comments adequately reflected throughout our revised manuscript.

<<Reviewer: 1>>

The manuscript entitled “Metal-Organic Frameworks Based Memristors: Materials, Devices, and Applications” presents employing of metal-organic frameworks in micro-nano devices as neuromorphic computing based on memristors.

After careful consideration, I concluded the presented manuscript has focused on the interesting and neglected aspect of the MOF area.  The manuscript can be published after minor revision. I can provide some of the important comments as minor revisions as follows:  

Comment1#: Please add a contents section on the front page of the manuscript

Response: Thanks for your reminder, which has been added and marked in red.

Comment 2#: Please add an Abbreviation section on the front page of the manuscript

Response: Thanks for your reminder, which has been added and marked in red.

Comment 3#: Please improve the resolution of the Figures

Response: Thanks for your reminder, we have replaced some of the pictures.

Comment 4#: One of the important parameters in the fabrication of thin films is controlling the morphology, thickness, nucleation, and growth of crystals. All of these parameters can be controlled by electrochemical synthesis and deposition techniques in MOF areas such as anodic electrodeposition, cathodic electrodeposition, bipolar deposition, electrochemically assisted self-assembly technique, and convergent and divergent paired electrodeposition methods. I would like to suggest that these techniques mentioned as MOF synthesis methods or Outlooks sections by following references: 10.1002/celc.201402429, 10.1038/s41598-019-50390-y,

Response: Thanks for your sharing. In the reported    research, the electrochemical synthesis has not been used to fabricate MOFs-based memristor, but we think it is very promising after learning this synthesis method. We have introduced it in a section and marked in red.

Comment 5#: I would like to suggest that compare the advantages and disadvantages of MOF-based memristors and Other-based memristors in a Table or distinguished section.

Response: Thanks for your suggestion, we have described the comparison between MOFs and others and added the corresponding device parameters in the Table1. It is marked in red.

Comment 6#: One of the important parameters in the fabrication of MOF-based memristor systems is the conductivity of MOF films. One of the solutions is using bi-metallic MOFs instead of mono-metallic MOFs.  I would like to suggest that these materials be mentioned and introduced as MOF synthesis methods or Outlooks sections by following references:  10.1016/j.microc.2021.106229, 10.1016/j.est.2022.105381,

Response: Thanks for sharing. Bimetallic MOF indeed has greater advantages than single metal MOF in terms of stability, catalytic activity and adsorption selectivity. For this, we mention this content in the outlook section after modification, which is marked in red.

Comment 7#: Please add a suitable graphical abstract to the manuscript.

Response: Thanks for your reminder, which has been added and marked in red.

Thank you very much for giving us very fruitful and valuable comments.

Reviewer 2 Report

In this manuscript, the authors mainly summarize recent advances about the research progress and prospects of metal-organic frameworks based memristors. It focuses on the potential applications of MOFs-based memristors in data storage and neuromorphic computing. Overall, this is a well-written review so that readers can get a good understanding of the latest research progress and development prospects of MOFs-based memristors. However, there are still some minor flaws that need to be addressed: 

1.      On line 129, 242, 245 and 252, the FJU-23-H2O should pay attention to the lower corner mark, please check the full text.

2.      On line 172, Ag+ is going to be upper marker, please check the full text.

3.       On line 248, The c in c-axis should be italicized. On line 255, the β should be italicized, please check the full text.

4.       On line 418 and 419, there should be a space between the number and nm. On line 871, 907, 963, 1124 and 1152, there should be a space between the number and V, please check the full text.

5.       Some recent important MOFs-based memristors should also be discussed, for example, Inorg. Chem. 2019, 58, 13862; Angew. Chem. Int. Ed. 2021, 60, 16911; Chem. Mater. 2021,33, 2178.

Author Response

To Reviewer:

Thank you very much for reviewing our manuscript. We have revised our manuscript based on your valuable suggestions and comments. We would like to express our appreciation in advance for your reviewing our revised manuscript. We hope that you will find your suggestions and comments adequately reflected throughout our revised manuscript.

<<Reviewer: 2>>

In this manuscript, the authors mainly summarize recent advances about the research progress and prospects of metal-organic frameworks based memristors. It focuses on the potential applications of MOFs-based memristors in data storage and neuromorphic computing. Overall, this is a well-written review so that readers can get a good understanding of the latest research progress and development prospects of MOFs-based memristors. However, there are still some minor flaws that need to be addressed: 

Comment:

• On line 129, 242, 245 and 252, the FJU-23-H2O should pay attention to the lower corner mark, please check the full text.
• On line 172, Ag+ is going to be upper marker, please check the full text.
• On line 248, The c in c-axis should be italicized. On line 255, the β should be italicized, please check the full text.
• On line 418 and 419, there should be a space between the number and nm. On line 871, 907, 963, 1124 and 1152, there should be a space between the number and V, please check the full text.

Response: Thanks for your correction on the format details of the article. We have checked and revised all the format issues mentioned in the comments,which is marked in red.

Comment:

• Some recent important MOFs-based memristors should also be discussed, for example,  Chem. 2019,58, 13862; Angew. Chem. Int. Ed. 2021, 60, 16911; Chem. Mater. 2021,33, 2178.

Response: Thanks for your sharing, we have spent a lot of energy on the literature query of MOFs-based memristors in recent years, and we have not thought that there are still some omissions. We 've reviewed three of your recommended papers in detail, and we 've added the first you 've shared to the section on guest molecule regulation in Material Properties. However, the memristor material reported in the second article is polyoxometalate (POM), which is similar to MOFs in chemical structure, but still slightly different from the metal-organic framework. And the third sharing document corresponds to the literature we have collected, and it corresponds to reference literature [52] in the unmodified version of this article. The additional part is marked in red.

Thank you very much for giving us very fruitful and valuable comments.