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Open AccessArticle

Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

1
Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USA
2
Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, USA
*
Author to whom correspondence should be addressed.
Academic Editors: Xuejun Lu and Derek J. McPhee
Molecules 2020, 25(5), 1081; https://doi.org/10.3390/molecules25051081
Received: 24 December 2019 / Revised: 18 February 2020 / Accepted: 26 February 2020 / Published: 28 February 2020
(This article belongs to the Special Issue Optical Properties of Nanomaterials)
Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS2) by multiple printing passes to construct a MoS2–NDG stack. We demonstrate top-gated fully inkjet-printed MoS2–NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO3) dielectric. A 100% inkjet-printed MoS2–NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches. View Full-Text
Keywords: inkjet printing; graphene; molybdenum disulfide; Raman; thin-films; cross-section; nanosheets; on/off ratio; transistor inkjet printing; graphene; molybdenum disulfide; Raman; thin-films; cross-section; nanosheets; on/off ratio; transistor
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MDPI and ACS Style

Jewel, M.U.; Monne, M.A.; Mishra, B.; Chen, M.Y. Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors. Molecules 2020, 25, 1081. https://doi.org/10.3390/molecules25051081

AMA Style

Jewel MU, Monne MA, Mishra B, Chen MY. Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors. Molecules. 2020; 25(5):1081. https://doi.org/10.3390/molecules25051081

Chicago/Turabian Style

Jewel, Mohi U.; Monne, Mahmuda A.; Mishra, Bhagyashree; Chen, Maggie Y. 2020. "Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors" Molecules 25, no. 5: 1081. https://doi.org/10.3390/molecules25051081

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