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Open AccessArticle

Applied Trace Alkali Metal Elements for Semiconductor Property Modulation of Perovskite Thin Films

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Beijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, China
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State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100864, China
*
Author to whom correspondence should be addressed.
Molecules 2019, 24(22), 4039; https://doi.org/10.3390/molecules24224039
Received: 30 September 2019 / Revised: 27 October 2019 / Accepted: 2 November 2019 / Published: 7 November 2019
With the rapid consumption of energy, clean solar energy has become a key study and development subject, especially the when new renewable energy perovskite solar cells (PSCs) are involved. The doping method is a common means to modulate the properties of perovskite film. The main work of this paper is to incorporate trace amounts of alkali metal elements into the perovskite layer and observe the effects on the properties of the perovskite device and the majority carrier type of the perovskite film. Comparative analysis was performed by doping with Na+, K+, and Rb+ or using undoped devices in the perovskite layer. The results show that the incorporation of alkali metal ions into the perovskite layer has an important effect on the majority carrier type of the perovskite film. The majority carrier type of the undoped perovskite layer is N-type, and the majority carrier type of the perovskite layer doped with the alkali metal element is P-type. The carrier concentration of perovskite films is increased by at least two orders of magnitude after doping. That is to say, we can control the majority of the carrier type of the perovskite layer by controlling the doping subjectively. This will provide strong support for the development of future homojunction perovskite solar cells. This is of great help to improve the performance of PSC devices. View Full-Text
Keywords: alkali metal; perovskite solar cells; N-type; P-type; homojunction; doping; films alkali metal; perovskite solar cells; N-type; P-type; homojunction; doping; films
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MDPI and ACS Style

Chang, C.; Zou, X.; Cheng, J.; Ling, T.; Yao, Y.; Chen, D. Applied Trace Alkali Metal Elements for Semiconductor Property Modulation of Perovskite Thin Films. Molecules 2019, 24, 4039.

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