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Zero-Bias Visible to Near-Infrared Horizontal p-n-p TiO2 Nanotubes Doped Monolayer Graphene Photodetector

School of Optoelectronic Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Author to whom correspondence should be addressed.
Molecules 2019, 24(10), 1870;
Received: 30 March 2019 / Revised: 3 May 2019 / Accepted: 8 May 2019 / Published: 15 May 2019
(This article belongs to the Special Issue Graphene Nanocomposites)
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We present a p-n-p monolayer graphene photodetector doped with titanium dioxide nanotubes for detecting light from visible to near-infrared (405 to 1310 nm) region. The built-in electric field separates the photo-induced electrons and holes to generate photocurrent without bias voltage, which allows the device to have meager power consumption. Moreover, the detector is very sensitive to the illumination area, and we analyze the reason using the energy band theory. The response time of the detector is about 30 ms. The horizontal p-n-p device is a suitable candidate in zero-bias optoelectronic applications. View Full-Text
Keywords: graphene; TiO2 nanotubes; broadband; zero-bias; p-n-p junction graphene; TiO2 nanotubes; broadband; zero-bias; p-n-p junction

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Huang, Z.; Ji, C.; Cheng, L.; Han, J.; Yang, M.; Wei, X.; Jiang, Y.; Wang, J. Zero-Bias Visible to Near-Infrared Horizontal p-n-p TiO2 Nanotubes Doped Monolayer Graphene Photodetector. Molecules 2019, 24, 1870.

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