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Entropy 2018, 20(9), 697; https://doi.org/10.3390/e20090697

Strange Attractors Generated by Multiple-Valued Static Memory Cell with Polynomial Approximation of Resonant Tunneling Diodes

Department of Radio Electronics, FEEC, Brno University of Technology, 601 90 Brno, Czech Republic
Received: 20 August 2018 / Revised: 7 September 2018 / Accepted: 9 September 2018 / Published: 12 September 2018
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Abstract

This paper brings analysis of the multiple-valued memory system (MVMS) composed by a pair of the resonant tunneling diodes (RTD). Ampere-voltage characteristic (AVC) of both diodes is approximated in operational voltage range as common in practice: by polynomial scalar function. Mathematical model of MVMS represents autonomous deterministic dynamical system with three degrees of freedom and smooth vector field. Based on the very recent results achieved for piecewise-linear MVMS numerical values of the parameters are calculated such that funnel and double spiral chaotic attractor is observed. Existence of such types of strange attractors is proved both numerically by using concept of the largest Lyapunov exponents (LLE) and experimentally by computer-aided simulation of designed lumped circuit using only commercially available active elements. View Full-Text
Keywords: chaos; Lyapunov exponents; multiple-valued; static memory; strange attractors chaos; Lyapunov exponents; multiple-valued; static memory; strange attractors
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Petrzela, J. Strange Attractors Generated by Multiple-Valued Static Memory Cell with Polynomial Approximation of Resonant Tunneling Diodes. Entropy 2018, 20, 697.

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