Search Results (8)

In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We introduced air-bridge structures into the outer metal wire to improve the capacitance per unit volume while utilizing a miniaturized chip with dimensions 1538 μm × 800 μm (0.029 λ₀ × 0.015 λ₀) for the BPF. The pattern was designed and optimized by simulating different dimensional parameters, and the group delay and current density are presented. The equivalent circuit was modeled to analysis various parasitic effect. Additionally, we described the GaAs-based micro-nano scale fabrication process to elucidate the proposed IPD technology and the physical structure of the BPF. Measurements were conducted with a center frequency of 1.53 GHz (insertion loss of 0.53 dB) and a 3-dB fractional bandwidth (FBW) of 70.59%. The transmission zero was located at 4.16 GHz with restraint of 35.86 dB. Owing to the benefits from its miniaturized chip size and high performance, the proposed GaAs-based IPD BPF was verified as an excellent device for various S-band applications, such as satellite communication, keyless vehicle locks, wireless headphones, and radar. Full article

Here, we propose a glucose biosensor with the advantages of quantification, excellent linearity, temperature-calibration function, and real-time detection based on a resistor and capacitor, in which the resistor works as a temperature sensor and the capacitor works as a biosensor. The resistor has a symmetrical meandering type structure that increases the contact area, leading to variations in resistance and effective temperature monitoring of a glucose solution. The capacitor is designed with an intertwined structure that fully contacts the glucose solution, so that capacitance is sensitively varied, and high sensitivity monitoring can be realized. Moreover, a polydimethylsiloxane microfluidic channel is applied to achieve a fixed shape, a fixed point, and quantitative measurements, which can eliminate influences caused by fluidity, shape, and thickness of the glucose sample. The glucose solution in a temperature range of 25–100 °C is measured with variations of 0.2716 Ω/°C and a linearity response of 0.9993, ensuring that the capacitor sensor can have reference temperature information before detecting the glucose concentration, achieving the purpose of temperature calibration. The proposed capacitor-based biosensor demonstrates sensitivities of 0.413 nF/mg·dL⁻¹, 0.048 nF/mg·dL⁻¹, and 0.011 pF/mg·dL⁻¹; linearity responses of 0.96039, 0.91547, and 0.97835; and response times less than 1 second, respectively, at DC, 1 kHz, and 1 MHz for a glucose solution with a concentration range of 25–1000 mg/dL. Full article

This article presents a high-sensitivity, quantified, linear, and mediator-free resonator-based microwave biosensor for glucose sensing application. The proposed biosensor comprises an air-bridge-type asymmetrical differential inductor (L) and a center-loaded circular finger-based inter-digital capacitor (C) fabricated on Gallium Arsenide (GaAs) substrate using advanced micro-fabrication technology. The intertwined asymmetrical differential inductor is used to achieve a high inductance value with a suitable Q-factor, and the centralized inter-digital capacitor is introduced to generate an intensified electric field. The designed microwave sensor is optimized to operate at a low resonating frequency that increases the electric field penetration depth and interaction area in the glucose sample. The microwave biosensor is tested with different glucose concentrations (0.3–5 mg/ml), under different ambient temperatures (10–50 °C). The involvement of advanced micro-fabrication technology effectively miniaturized the microwave biosensor (0.006λ₀ × 0.005λ₀) and enhanced its filling factor. The proposed microwave biosensor demonstrates a high sensitivity of 117.5 MHz/mgmL^-1 with a linear response (r² = 0.9987), good amplitude variation of 0.49 dB/mgmL^-1 with a linear response (r² = 0.9954), and maximum reproducibility of 0.78% at 2 mg/mL. Additionally, mathematical modelling was performed to estimate the dielectric value of the frequency-dependent glucose sample. The measured and analyzed results indicate that the proposed biosensor is suitable for real-time blood glucose detection measurements. Full article

This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ₀ (0.8 × 0.8 mm²) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance. Full article

In this work, a miniaturized bandpass filter (BPF) constructed of two spiral intertwined inductors and a central capacitor, with several interdigital structures, was designed and fabricated using integrated passive device (IPD) technology on a GaAs wafer. Five air-bridge structures were introduced to enhance the mutual inductive effect and form the differential geometry of the outer inductors. In addition, the design of the differential inductor combined with the centrally embedded capacitor results in a compact construction with the overall size of 0.037λ₀ × 0.019λ₀ (1537.7 × 800 μm²) where λ₀ is the wavelength of the central frequency. For the accuracy evolution of the equivalent circuit, the frequency-dependent lumped elements of the proposed BPF was analyzed and modeled through the segment method, mutual inductance approach, and simulated scattering parameters (S-parameters). Afterward, the BPF was fabricated using GaAs-based IPD technology and a 16-step manufacture flow was accounted for in detail. Finally, the fabricated BPF was wire-bonded with Au wires and packaged onto a printed circuit board for radio-frequency performance measurements. The measured results indicate that the implemented BPF possesses a center frequency operating at 2 GHz with the insertion losses of 0.38 dB and the return losses of 40 dB, respectively, and an ultrawide passband was achieved with a 3-dB fraction bandwidth of 72.53%, as well. In addition, a transmission zero is located at 5.32 GHz. Moreover, the variation of the resonant frequency with different inductor turns and metal thicknesses was analyzed through the simulation results, demonstrating good controllability of the proposed BPF. Full article

As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λ_g × 0.013 λ_g with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results. Full article

This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capacitor. Air-bridge structures were introduced to the outer inductor and inner capacitor for the purpose of space-saving, thereby yielding a filter with an overall chip area of 1178 μm × 970 μm. Thus, not only is the chip area minimized, but the magnitude of return loss is also improved as a result of selective variation of bridge capacitance. The proposed device possesses a single passband with a central frequency of 1.71 GHz (return loss: 32.1 dB), and a wide fractional bandwidth (FBW) of 66.63% (insertion loss: 0.50 dB). One transmission zero with an amplitude of 43.42 dB was obtained on the right side of the passband at 4.48 GHz. Owing to its miniaturized chip size, wide FBW, good out-band suppression, and ability to yield high-quality signals, the fabricated bandpass filter can be implemented in various L-band applications such as mobile services, satellite navigation, telecommunications, and aircraft surveillance. Full article

In this study, the proposed bandpass filter (BPF) connects an interdigital and a spiral capacitor in series between the two symmetrical halves of a circular intertwined spiral inductor. For the mass production of devices and to achieve a higher accuracy and a better performance compared with other passive technologies, we used integrated passive device (IPD) technology. IPD has been widely used to realize compact BPFs and achieve the abovementioned. The center frequency of the proposed BPF is 1.96 GHz, and the return loss, insertion loss and transmission zero are 26.77 dB, 0.27 dB and 38.12 dB, respectively. The overall dimensions of BPFs manufactured using IPD technology are 984 × 800 ${\mathsf{\mu }\mathrm{m}}^2$ , which is advantageous for miniaturization and integration. Full article