Search Results (3)

The FY-4B satellite, launched in June 2021 as China’s new-generation geostationary meteorological satellite, carries three identical High-Energy Particle Detectors (HEPDs) that enable multi-directional, wide-spectral measurements of energetic electrons. The three units are mounted in the zenith (−Z), flight (+X with a +Y offset of 30°), and anti-flight (−X with a −Y offset of 30°) directions, allowing simultaneous observations from nine look directions over a field of view close to 180° in the 0.4–4 MeV energy range (eight energy channels). This paper systematically presents the design principles of the HEPD electron detector, the ground calibration scheme, and preliminary in-orbit validation results. The probe employs a multi-layer silicon semiconductor telescope technique to achieve high-precision measurements of electron energy spectra, fluxes, and directional anisotropy in the 0.4–4 MeV range. Ground synchrotron calibration shows that the energy resolution is better than 16% for energies above 1 MeV, and the angular resolution is about 20°, providing a solid basis for subsequent quantitative inversion. During in-orbit operation, HEPD remains stable under both quiet conditions and strong geomagnetic storms: the measured electron fluxes, differential energy spectra, and directional distributions show good agreement with GOES-16 observations in the same energy bands during quiet periods and for the first time provide from geostationary orbit pitch-angle-resolved images of the minute-scale evolution of electron enhancement events. These results demonstrate that HEPD is capable of long-term monitoring of the geostationary radiation environment and can supply high-quality, continuous, and reliable data to support studies of radiation-belt particle dynamics, data assimilation in space weather models, and radiation warnings for satellites in orbit. Full article

This review explores the applications of room temperature semiconductor detectors, with a focus on Cd(Zn)Te based detection systems, in non-destructive testing and evaluation (NDT&E). Cd(Zn)Te detectors, which operate efficiently at ambient temperatures, eliminate the need for cryogenic cooling systems and offer high energy and spatial resolution, making them ideal for a wide range of NDT&E applications. Key performance parameters such as energy resolution, spatial resolution, time resolution, detector efficiency, and form factor are discussed. The paper highlights the utilization of Cd(Zn)Te detectors in various imaging and spectroscopic applications, including nuclear threat detection and non-proliferation, archaeological NDT, and Unmanned Aerial Vehicle radiological surveying. Cd(Zn)Te detectors hold significant promise in NDT&E due to their high-resolution imaging, superior spectroscopic capabilities, versatility, and portability. Full article

Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately. Pd is a refractory metal with high material weight-to-thickness ratio and a work function as high as nickel, one of the conventional metal contacts for high performing 4H-SiC Schottky barrier detectors (SBDs). In this article, Pd/4H-SiC epitaxial SBDs have been demonstrated for the first time as a superior self-biased (0 V applied bias) radiation detector when compared to benchmark Ni/4H-SiC SBDs. The Pd/4H-SiC SBD radiation detectors showed a very high energy resolution of 1.9% and 0.49% under self- and optimized bias, respectively, for 5486 keV alpha particles. The SBDs demonstrated a built-in voltage (V_bi) of 2.03 V and a hole diffusion length (L_d) of 30.8 µm. Such high V_bi and L_d led to an excellent charge collection efficiency of 76% in the self-biased mode. Capacitance mode deep level transient spectroscopy (DLTS) results revealed that the “lifetime-killer” Z_1/2 trap centers were present in the 4H-SiC epilayer. Another deep level trap was located at 1.09 eV below the conduction band minimum and resembles the EH5 trap with a concentration of 1.98 × 10¹¹ cm⁻³ and capture cross-section 1.7 × 10⁻¹⁷ cm⁻²; however, the detector performance was found to be limited by charge trapping in the Z_1/2 center. The results presented in this article revealed the unexplored potential of a wide bandgap semiconductor, SiC, as high-efficiency self-biased radiation detectors. Such high performance self-biased radiation detectors are poised to address the longstanding problem of designing self-powered sensor devices for harsh environment applications e.g., advanced nuclear reactors and deep space missions. Full article