Search Results (49)

Transparent conductive aluminum-doped zinc oxide (AZO) films were investigated as potential recombination layers for perovskite/silicon tandem solar cells, comparing the results of atomic layer deposition (ALD) and magnetron sputtering (MS) on vertically aligned silicon nanowire (SiNW) scaffolds. Conformality and thickness control were examined by cross-sectional SEM/TEM and profilometry, revealing fully conformal ALD coatings with tunable thicknesses (40–120 nm) versus tip-capped, semi-uniform MS films (100–120 nm). Optical transmission measurements on glass substrates showed that both 120 nm ALD and MS layers exhibit interference maxima near 450–500 nm and 72–89% transmission across 800–1200 nm; the thinnest ALD films reached up to 86% near-IR transparency. Four-point probe analysis demonstrated that ALD reduces surface resistance from 1150 Ω/□ at 40 nm to 245 Ω/□ at 120 nm, while MS layers achieved 317 Ω/□ at 120 nm. These results delineate the balance between conformality, transparency, and conductivity, providing design guidelines for AZO recombination interfaces in next-generation tandem photovoltaics. Full article

Transparent conductive oxides (TCOs) have become essential components in a broad range of modern devices, including smartphones, flat-panel displays, and photovoltaic cells. Currently, indium tin oxide (ITO) is used in approximately 90% of these devices. However, ITO prices continue to rise due to the limited supply of indium (In), making the development of alternative materials for TCOs indispensable. Therefore, this study highlights the latest advances in creating new, affordable materials, with a focus on aluminum-doped zinc oxide (AZO). Over the last few decades, this material has been widely studied to improve its physical properties, particularly its low electrical resistivity, which can affect the performance of various devices. Now, it is close to replacing ITO due to several advantages including cost-effectiveness, stability under hydrogen plasma, low processing temperatures, and lack of toxicity. Besides that, in comparison to other TCOs such as IZO, IGZO, or IZrO, AZO achieved a low electrical resistivity (10⁻⁵ ohm cm) while maintaining a high transparency across the visible spectrum (over 85%). Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. This review emphasizes the potential of AZO as a cost-effective and scalable alternative to ITO, highlighting key advancements in deposition techniques such as pulsed laser deposition (PLD). Full article

This article analyzes the reactive magnetron sputtering process, using a two-element Zn-Al target, for depositing aluminum-doped zinc oxide (AZO) layers, aimed at transparent electronics. AZO films were deposited on Corning 7059 glass, flexible Corning Willow^® glass and amorphous silica substrates. To optimize the process, the study examined the target surface state across varying argon/oxygen ratios. The gas mixture significantly influenced the Al/Zn atomic ratio in the films, affecting their structural, optical and electrical performance. Films deposited at 80/20 argon/oxygen ratio—near the dielectric mode—showed high light transmission (84%) but high resistivity (47.4·10⁻³ Ω·cm). Films deposited at ratio of 84/16—close to metallic mode—exhibited lower resistivity (1.9·10⁻³ Ω·cm) but reduced light transmission (65%). The best balance was achieved with an 82/18 ratio, yielding high light transmission (83%) and low resistivity (1.4·10⁻³ Ω·cm). These findings highlight the critical role of sputtering atmosphere in tailoring AZO layer properties for use in transparent electronics. Full article

The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al₂O₃ depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl₂O₄ crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm² and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions. Full article

In the present study, for the first time, aluminum-doped zinc oxide (AZO) thin films with nanoinclusions of amorphous carbon have been synthesized via spin coating, and the thermoelectric performances were investigated varying the aging period of the solution, the procedure of carbon nanoparticles’ addition, and the annealing atmosphere. The addition of nanoparticles has been pursued to introduce phonon scattering centers to reduce thermal conductivity. All the samples showed a strong orientation along the [002] crystallographic direction, even though the substrate is amorphous silica, with an intensity of the diffraction peaks reaching its maximum in samples annealed in the presence of hydrogen, and generally decreasing by the addition of carbon nanoparticles. Absolute values of the Seebeck coefficient improve when nanoparticles are added. At the same time, electric conductivity is higher for the sample with 1 wt.% of carbon and annealed in Ar with 1% of H₂, both increasing in absolute value with the temperature rise. Among all the samples, the lowest thermal conductivity value of 1.25 W/(m∙K) was found at room temperature, and the highest power factor was 111 μW/(m∙K²) at 325 °C. Thus, the introduction of carbon effectively reduced thermal conductivity, while also increasing the power factor, giving promising results for the further development of AZO-based materials for thermoelectric applications. Full article

This work investigates the endurance and performance of aluminum-doped zinc oxide (AZO) thin films fabricated on flexible polyethylene terephthalate (PET) substrates, providing new insights into their degradation linked to mechanical flexing and accelerated thermal cycling (ATC). The current study uniquely combines cyclic bending fatigue at 23 °C and 70 °C with ATC between 0 °C and 100 °C, simulating operational stresses in real-world environments, in contrast to previous research that has focused primarily on either isolated mechanical or thermal effects. The 425 nm thick films showed high transparency and conductivity, making them suitable materials for flexible electronics and optoelectronic devices. In this work, electrical resistivity, one of the most important performance parameters, was investigated after each mechanical or thermal cycle. The results indicate that mechanical cycling at high temperatures can drastically enhance the crack formation and electrical degradation, with an over 250% change in the electrical resistance (PCER) after 12,000 cycles at 70 °C and more than 300% after 500 thermal cycles. The highly deleterious effects of combined stressors on the structural integrity and electrical properties of AZO films are underlined by these observations. This study further suggests that the design of more robust AZO-based materials/coatings would contribute toward achieving better durability in flexible electronic applications. These findings also go hand in glove with the ninth goal of the United Nations’ Sustainable Development Goals, specifically Target 9.5: Enhance Research and Upgrade Industrial Technologies. Full article

Neuromorphic devices are electronic devices that mimic the information processing methods of neurons and synapses, enabling them to perform multiple tasks simultaneously with low power consumption and exhibit learning ability. However, their large-scale production and efficient operation remain a challenge. Herein, we fabricated an aluminum-doped zinc oxide (AZO) synaptic transistor via solution-based spin-coating. The transistor is characterized by low production costs and high performance. It demonstrates high responsiveness under UV laser illumination. In addition, it exhibits effective synaptic behaviors under blue LED illumination, indicating high-efficiency operation. The paired-pulse facilitation (PPF) index measured from optical stimulus modulation was 179.6%, indicating strong synaptic connectivity and effective neural communication and processing. Furthermore, by modulating the blue LED light pulse frequency, an excitatory postsynaptic current gain of 4.3 was achieved, demonstrating efficient neuromorphic functionality. This study shows that AZO synaptic transistors are promising candidates for artificial synaptic devices. Full article

Recent developments in architectural materials emphasize the importance of antibacterial and thermal insulation functions due to the prevalence of diseases such as COVID-19 and influenza. There is a growing expectation for the implementation of constructed glass that possesses antibacterial properties. Low-emissivity (Low-E) glass, known for its ability to reduce infrared radiation penetration through windows, is a focal point of our ongoing research. In this study, we continued our preliminary investigations into the development of Low-E glass by preparing copper/aluminum-doped zinc oxide (Cu/AZO) films on glass substrates through in-line sputtering. Copper was incorporated to provide antibacterial functionality, while aluminum-doped zinc oxide was chosen for its high visible optical transmission, which is crucial for architectural glass, and its low electrical resistivity indicative of thermal insulation properties. A vacuum annealing process was subsequently applied to the Cu/AZO films on glass. The evaluation of these films involved measuring electrical resistivity that correlates with emissivity, as well as assessing average visible transmission and antibacterial effectiveness according to the JIS Z2801:2000 standard. The results of these tests reveal that the vacuum-annealed Cu/AZO films on glass exhibited commendable antibacterial and thermal insulation properties. Specifically, the antibacterial index (R) was determined to be 8.75; the emissivity, calculated from the measured electrical resistivity, was found to be 0.18; and the average visible transmission was recorded at 52.78%. These findings underscore the potential of Cu/AZO films in advancing the functionality of architectural glass. Full article

The structural, wettability, and optical characteristics of aluminum-doped zinc oxide (AZO) thin films were studied with the objective of understanding the impact of deposition power and deposition temperature. Thin films were deposited using a radio frequency (RF) magnetron sputtering technique. The power output of the RF was augmented from 200 to 260 W, and the temperature was increased from 50 to 200 °C, which led to the development of a (002) peak for zinc oxide. The study of film thickness was carried out using the Swanepoel envelope method from data obtained through the UV-Vis spectrum. An increase in surface roughness value was shown to be connected with fluctuations in temperature as well as increases in deposition power. The findings revealed that as deposition power and temperature increased, the value of optical transmittance decreased, ranging from 70% to 90% based on the deposition parameters within the range of wavelengths that extend from 300 to 800 nm. The wettability properties of the samples were studied, and the maximum contact angle achieved was 110°. A Peltier apparatus was utilised in order to investigate the anti-icing capabilities, which revealed that the icing process was slowed down 3.38-fold. This work extends the understanding of the hydrophobicity and anti-icing capabilities of AZO thin films, specifically increasing both attributes which provide feasible options for purposes requiring resistance to ice. Full article

AZO-coated ZnO core–shell nanorods were successfully fabricated using the mist chemical vapor deposition method. The influence of coating time on the structural, optical, and photocatalytic properties of zinc oxide nanorods was investigated. It was observed that the surface area of AZO-coated ZnO core–shell nanorods increased with an increase in coating time. The growth orientation along the (0001) crystal plane of the AZO thin film coating was the same as that of zinc oxide nanorods. The crystallinity of AZO-coated ZnO core–shell nanorods was significantly improved as well. The optical transmittance of AZO-coated ZnO core–shell nanorods was greater than 55% in the visible region. The degradation efficiency for methyl red dye solution increased with an increase in coating time. The highest degradation efficiency was achieved by AZO-coated ZnO core–shell nanorods with a coating duration of 20 min, exhibiting a degradation rate of 0.0053 min⁻¹. The photodegradation mechanism of AZO-coated ZnO core–shell nanorods under ultraviolet irradiation was revealed. Full article

This work analyzed and compared the optical and photoenergetic properties of low-emissivity coatings made from various dielectric materials deposited through magnetron sputtering following a systematic, comparable method. Different multilayer structures of silver-based low-emissivity coatings were studied using SnO₂, ZnO, SiAlN_x, and aluminum-doped zinc oxide (AZO, which is inherently a semiconductor, but it fulfils an optical dielectric function in this type of structure). The properties of the coatings were determined by spectrophotometric and sheet resistance measurements. Coatings with AZO as the dielectric layers obtain the best photoenergetic performance because silver growth is more efficient on AZO. We also studied the effect of ion bombardment on AZO and SiAlN_x in an attempt to obtain a better low-emissivity coating, achieving better results when etching the dielectric layer with an ion gun. Regarding the structures’ visible transmission, the oxides produced better transmission results. Based on the above, we concluded that AZO had the best optical and photoenergetic properties in our deposition system, observing, in the best-case scenario, improvements in emissivity from 0.083 with SnO₂ to 0.058 with AZO and to 0.052 using an ion beam on AZO and improvements in visible transmission from 81.9% with SnO₂ to 86.8% with AZO. Full article

This research sought to determine the optimal conditions for depositing thin silver layers in the fabrication of low-emissivity coatings. The study utilized an in-line semi-industrial high-vacuum magnetron sputtering system with rectangular targets, closely resembling those used in industrial settings. Trilayer AZO/Ag/AZO structures were deposited to enhance the wetting properties of the silver, and to protect it from the atmosphere. The effects of the power and argon flow on the sample properties were analyzed, along with variations in the silver thickness. The results demonstrate that a lower power (200 W) and higher argon flows (1000 sccm) lead to a higher transmittance and a lower sheet resistance, resulting in a reduced emissivity (up to 0.015 for 24 nm of silver). The identified optimal conditions offer valuable recommendations for producing more efficient and optically superior coatings. This study also reveals the importance of the silver thickness to the properties of the coatings, in accordance with previous research findings. These findings provide insights for improving the performance of low-emissivity coatings in various applications. Full article

Due to the excellent performance and low cost of the new aluminum-doped zinc oxide (AZO) film, it is expected to replace the mature indium-doped tin oxide (ITO) film. The research status and progress of AZO transparent conductive films are summarized in this review. Moreover, the structure, optoelectronic properties, and conductive mechanism of AZO thin films are also detailed. The thin films’ main preparation processes and the advantages and disadvantages of each process method are mainly discussed, and their application fields are expounded. AZO thin films with multicomponent composite structures are one of the promising development directions in transparent conductive oxide (TCO) thin films. The development of various preparation processes has promoted the production and application of thin films on a broad scale. Finally, some improvement schemes have been proposed to improve the comprehensive performance of the film. The industrialization prospects of the AZO film, as well as its great development potential in the digital world, are discussed. Full article

With the continuous growth in the optoelectronic industry, the demand for novel and highly efficient materials is also growing. Specifically, the demand for the key component of several optoelectronic devices, i.e., transparent conducting oxides (TCOs), is receiving significant attention. The major reason behind this is the dependence of the current technology on only one material—indium tin oxide (ITO). Even though ITO still remains a highly efficient material, its high cost and the worldwide scarcity of indium creates an urgency for finding an alternative. In this regard, doped zinc oxide (ZnO), in particular, solution-processed aluminum doped ZnO (AZO), is emerging as a leading candidate to replace ITO due to its high abundant and exceptional physical/chemical properties. In this mini review, recent progress in the development of solution-processed AZO is presented. Beside the systematic review of the literature, the solution processable approaches used to synthesize AZO and the effect of aluminum doping content on the functional properties of AZO are also discussed. Moreover, the co-doping strategy (doping of aluminum with other elements) used to further improve the properties of AZO is also discussed and reviewed in this article. Full article

Herein, we investigated the applicability of thick film and bulk disk forms of aluminum-doped zinc oxide (AZO) for low-dose X-ray radiation dosimetry using the extended gate field effect transistor (EGFET) configuration. The samples were fabricated using the chemical bath deposition (CBD) technique. A thick film of AZO was deposited on a glass substrate, while the bulk disk form was prepared by pressing the collected powders. The prepared samples were characterized via X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) to determine the crystallinity and surface morphology. The analyses show that the samples are crystalline and comprise nanosheets of varying sizes. The EGFET devices were exposed to different X-ray radiation doses, then characterized by measuring the I–V characteristics pre- and post-irradiation. The measurements revealed an increase in the values of drain–source currents with radiation doses. To study the detection efficiency of the device, various bias voltages were also tested for the linear and saturation regimes. Performance parameters of the devices, such as sensitivity to X-radiation exposure and different gate bias voltage, were found to depend highly on the device geometry. The bulk disk type appears to be more radiation-sensitive than the AZO thick film. Furthermore, boosting the bias voltage increased the sensitivity of both devices. Full article