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Keywords = a-IZTO

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10 pages, 2472 KB  
Article
High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes
by Min-Woo Park, Sohyeon Kim, Su-Yeon Son, Si-Won Kim, Tae-Kyun Moon, Pei-Chen Su and Kyoung-Kook Kim
Materials 2025, 18(2), 216; https://doi.org/10.3390/ma18020216 - 7 Jan 2025
Cited by 2 | Viewed by 2040
Abstract
The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for [...] Read more.
The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality. XRD analysis confirmed the amorphous nature of the a-IZTO layers, ensuring structural stability post-thermal annealing. The a-IZTO TCEs demonstrated high optical transparency (89.57% in the visible range) and excellent flexibility, maintaining a low sheet resistance with minimal degradation even after 100,000 bending cycles. The fabricated AT-TFTs exhibit superior field-effect mobility (30.12 cm2/V·s), an on/off current ratio exceeding 108, and a subthreshold swing of 0.36 V/dec. The AT-TFT device demonstrated a minimum transmittance of 75.46% in the visible light range, confirming its suitability for next-generation flexible and transparent displays. Full article
(This article belongs to the Section Advanced Nanomaterials and Nanotechnology)
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8 pages, 2376 KB  
Article
New Low-Frame-Rate Compensating Pixel Circuit Based on Low-Temperature Poly-Si and Oxide TFTs for High-Pixel-Density Portable AMOLED Displays
by Ching-Lin Fan, Wei-Yu Lin and Chun-Yuan Chen
Micromachines 2021, 12(12), 1514; https://doi.org/10.3390/mi12121514 - 5 Dec 2021
Cited by 6 | Viewed by 4895
Abstract
A new low-frame-rate active-matrix organic light-emitting diode (AMOLED) pixel circuit with low-temperature poly-Si and oxide (LTPO) thin-film transistors (TFTs) for portable displays with high pixel density is reported. The proposed pixel circuit has the excellent ability to compensate for the threshold voltage variation [...] Read more.
A new low-frame-rate active-matrix organic light-emitting diode (AMOLED) pixel circuit with low-temperature poly-Si and oxide (LTPO) thin-film transistors (TFTs) for portable displays with high pixel density is reported. The proposed pixel circuit has the excellent ability to compensate for the threshold voltage variation of the driving TFT (ΔVTH_DTFT). By the results of simulation based on a fabricated LTPS TFT and a-IZTO TFT, we found that the error rates of the OLED current were all lower than 2.71% over the range of input data voltages when ΔVTH_DTFT = ±0.33 V, and a low frame rate of 1 Hz could be achieved with no flicker phenomenon. Moreover, with only one capacitor and two signal lines in the pixel circuit, a high pixel density and narrow bezel are expected to be realized. We revealed that the proposed 7T1C pixel circuit with low driving voltage and low frame rate is suitable for portable displays. Full article
(This article belongs to the Special Issue Thin Film Transistors: Material, Structure and Application)
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10 pages, 4392 KB  
Article
New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays
by Ching-Lin Fan, Hou-Yen Tsao, Chun-Yuan Chen, Pei-Chieh Chou and Wei-Yu Lin
Coatings 2020, 10(10), 1004; https://doi.org/10.3390/coatings10101004 - 20 Oct 2020
Cited by 14 | Viewed by 5615
Abstract
In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will [...] Read more.
In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
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