Search Results (63)

Low-Energy High-Current Electron Beam (LEHCEB) is an innovative vacuum technology employed for the surface modification of conductive materials. Surface treatments by means of LEHCEB allow the melting and rapid solidification of a thin layer (up to ~10 μm) of material. The short duration of each pulse (2.5 μs) allows for the generation of high thermal rates, up to 10⁹ K/s. Due to the peculiar features of LEHCEB source, in situ temperature monitoring inside the vacuum chamber is unfeasible, even with the most rapid IR pyrometers available on the market. Therefore, multiphysics simulations serve as a tool for predicting and assessing the thermal effects induced by electron beam irradiation. COMSOL Multiphysics was employed to study the thermal behaviour of metals and alloys at the sub-microsecond time scale by implementing both experimental power time profiles and semi-empirical electron penetration functions. Three case studies were considered: (a) 17-4 PH steel produced by Binder Jetting, (b) biphasic Al-Si13 alloy, and (c) Magnetron Sputtering Nb films on Ti substrate. The influence on the thermal effects of electron accelerating voltage and number of pulses was investigated, as well as the role of the physicochemical properties of the materials. Full article

This paper investigates the influence of C₂H₂ flow rates on the optical properties, surface roughness, and residual stress of Ti/WC thin films deposited on glass substrates. A range of Ti/WC thin films with varying carbon contents were prepared using the reactive pulsed DC magnetron sputtering technique. The properties of the Ti/WC films can be tuned by adjusting the deposition parameters, among which the acetylene (C₂H₂) flow rate plays a key role in determining the thin film’s microstructure, optical properties, and stress behavior. The optical properties of the thin films were analyzed using UV-visible-NIR spectroscopy and Fourier transform infrared (FTIR) spectroscopy, the surface morphology was analyzed using microscopic interferometry, and the residual stress in the films was measured using a homemade Twyman–Green interferometer. The measurement results show that the average reflectance of Ti/WC films decreases with the increase in the C₂H₂ flow rate, and the measured value changes from 52.24% to 44.56% in the wavelength of 400–800 nm. The infrared reflectance of Ti/WC films in the wavelength of 2.5–25 μm is 81.8% for 10 sccm, 80.8% for 20 sccm, 77.2% for 30 sccm, and 73.6% for 40 sccm. The tensile stress of the Ti/WC films deposited on B270 substrates increases with the increase in the C₂H₂ flow rate, and the stress value changes from 0.361 GPa to 0.405 GPa. The surface roughness of Ti/WC films initially increases and then decreases slightly with the increase in the C₂H₂ flow rate. These results indicate that the C₂H₂ flow ratio significantly affects the reflectance in the visible and infrared bands, surface roughness, and residual stress of the Ti/WC films, which is of great significance for optimizing thin film performance to meet specific application requirements. Full article

The thin-film lithium niobate (TFLN)-based electro-optic (EO) modulator is one of the most important devices for optical communications in terms of the advantages of low voltages and large bandwidth. However, the large size of devices limits their applicability in large-scale integrated optical systems, posing a key challenge in maintaining performance advantages under restricted design space. In this paper, we propose a novel TFLN modulator on a quartz substrate incorporating barium titanate (BaTiO₃, BTO) as the cladding material. The device is designed with silicon–lithium niobate (Si-LN) hybrid waveguides for operation at a wavelength of 1.55 µm. After theoretical analysis and parameter optimization, the proposed 10 mm long modulator demonstrates high-efficiency modulation, featuring a low half-wave voltage-length product of 1.39 V·cm, a broad 3 dB EO bandwidth of 152 GHz, and low optical loss. This theoretical model provides a novel design solution for TFLN modulators on quartz substrates. Moreover, it is a promising solution for enhancing the integration of photonic devices on the TFLN platform. Full article

NiTi alloys and thin film/NiTi composites are extensively utilized in frictional environments, particularly those experiencing extreme temperature fluctuations. Current studies mainly focus on preparing wear-resistant films on NiTi alloy surfaces but neglect the potential impact of temperature-induced phase transitions in the NiTi substrate on thin films’ performance. This study examines the effect of NiTi alloy phase transitions, induced by extreme temperature variations, on the tribological properties of TiN thin films on NiTi substrates. TiN films (1 μm thick) were deposited on NiTi alloy surfaces using magnetron sputtering technology. The transition of the main phase in the NiTi substrate between the R phase and the B19′ phase was achieved via liquid nitrogen cooling (−196 °C) and water bath heating (90 °C). XRD, EDS, SEM, and tribological tests analyzed the phase structure, elemental composition, micromorphology, and tribological behavior. Fatigue wear was identified as the predominant wear mechanism for the TiN films, with minor contributions from oxidative and abrasive wear. Phase transition from the R phase to the B19′ phase in the NiTi substrate induced by temperature change couls reduce the wear rate of the TiN film by up to 41.97% and decrease the friction coefficient from about 0.45 to about 0.25. Furthermore, the shape memory effect of the NiTi alloy substrate, caused by B19′ → B2 phase transition, resulted in the recovery of the TiN thin film wear track depth from 920 nm to 550 nm, manifesting a “self-healing” phenomenon. The results in this study are important and necessary for the provision of thin film/NiTi composites in frictional environments. Full article

The TiB₂ film exhibits exceptional hardness and chemical stability due to its unique crystal structure and robust covalent bonds, but it also demonstrates high brittleness and poor toughness, which restricts its practical applications in engineering. By appropriately incorporating metal dopants, the toughness of the ceramic matrix can be enhanced without compromising its inherent hardness. In this study, TiB₂ films with different nickel contents (0–32.22 at.%) were fabricated through radio frequency magnetron sputtering. The microstructure, chemical composition, phase structure, and mechanical properties were analyzed using scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and nanoindentation tester. The pure TiB₂ film exhibited (0001) and (0002) peaks; however, the addition of nickel resulted in broadening of the (0001) peak and disappearance of the (0002) peak, and no crystalline nickel or other nickel-containing phases could be identified. It was found that the incorporation of nickel refines the grain structure of titanium diboride, with nickel present in an amorphous form at the boundaries of titanium diboride, thereby forming a wrapped structure. The enrichment of nickel at the grain boundary becomes more pronounced as the nickel content is further increased, which hinders the growth of TiB₂ grains, resulting in the thinning of columnar crystals and formation of nanocrystalline in the film, and the coating hardness remains above 20 GPa, when the nickel content is less than 10.83 at.%. With the increase in nickel content, titanium diboride exhibited a tendency to form an amorphous structure, while nickel became increasingly enriched at the boundaries, and the coating hardness and elastic modulus decreased. The wrapped microstructure could absorb the energy generated by compressive shear stress through plastic deformation, which should be beneficial to improve the toughness of the coatings. The addition of nickel enhanced the adhesion between the film and substrate while reducing the friction coefficient of the film. Specifically, when the nickel content reached 4.26 at.%, a notable enhancement in both nanohardness and toughness was observed for nanocomposite films. Full article

A new CuNi/TiB₂ thin-film thermocouple was fabricated using magnetron sputtering. A 400 nm thick CuNi interior layer was deposited on a dielectric substrate initiatory, and then covered by an 800 nm thick TiB₂ layer. The tests revealed that the TiB₂ layer had a dense and columnar cross-section. The measured hardness and elastic modulus of the TiB₂ layer were ~20.5 and 315.9 GPa, respectively. No cracking or delamination occurred at the CuNi/TiB₂ interface. The work functions of the TiB₂ and the CuNi layers were calculated to be 4.406 and 4.726 eV, respectively. The difference in work functions between the TiB₂ and the CuNi was ~0.3 eV. The CuNi/TiB₂ thin-film sensor exhibited a high Seebeck coefficient of 38.07 μV/°C with excellent linearity. The maximum service temperature of the thin-film sensor was evaluated to be ~400 °C. A further increase in temperature degraded the Seebeck coefficient due to oxidation of the TiB₂ layer. Full article

This paper explores the potential of phase change materials (PCM) for dynamically tuning the frequency response of a dumbbell u-slot defected ground structure (DGS)-based band stop filter. The DGSs are designed using co-planar waveguide (CPW) line structure on top of a barium strontium titanate (Ba_0.6Sr_0.4TiO₃) (BST) thin film. BST film is used as the high-dielectric material for the planar DGS. Lower insertion loss of less than −2 dB below the lower cutoff frequency, and enhanced band-rejection with notch depth of −39.64 dB at 27.75 GHz is achieved by cascading two-unit cells, compared to −12.26 dB rejection with a single-unit cell using BST thin film only. Further tunability is achieved by using a germanium telluride (GeTe) PCM layer. The electrical properties of PCM can be reversibly altered by transitioning between amorphous and crystalline phases. We demonstrate that incorporating a PCM layer into a DGS device allows for significant tuning of the resonance frequency: a shift in resonance frequency from 30.75 GHz to 33 GHz with a frequency shift of 2.25 GHz is achieved, i.e., 7.32% tuning is shown with a single DGS cell. Furthermore, by cascading two DGS cells with PCM, an even wider tuning range is achievable: a shift in resonance frequency from 27 GHz to 30.25 GHz with a frequency shift of 3.25 GHz is achieved, i.e., 12.04% tuning is shown by cascading two DGS cells. The results are validated through simulations and measurements, showcasing excellent agreement. Full article

Typical titanium oxide (TiO₂) films are transparent in the visible range, allowing for their index of refraction and thickness to be extracted by single-angle spectroscopic ellipsometry (SE) using a Cauchy model. However, TiO₂ films grown by atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium (IV) (TDMAT) and H₂O at 350 °C absorb in the visible range due to the formation of Ti-O-N/Ti-N bonds. Single-angle SE is inadequate for extracting the optical constants of these films, as there are more unknowns (n, k, d) than measurable parameters (ψ, Δ). To overcome this limitation, we combined SE with transmission (T) measurements, a method known as SE + T. In the process, we developed an approach to prevent backside deposition on quartz substrates during ALD deposition. When applying a B-spline model to SE + T data, the film thicknesses on the quartz substrates closely matched those on companion Si samples measured via standard lithography. The resulting optical constants indicate a reduced refractive index, n, and increased extinction coefficient, k, when compared to purer TiO₂ thin films deposited via a physical vapor deposition (PVD) method, reflecting the influence of nitrogen incorporation on the optical properties. Full article

We report a study on the SnS_x (x < 1) decoration of porous TiO₂ nanoparticle thin films using the ionic layer adsorption and reaction (ILAR) method. UV-vis absorption measurements revealed a direct bandgap of 1.40–2.10 eV for SnS_x (with x = 0.85) and 3.15 eV for TiO₂. Degradation of rhodamine B molecules in aqueous solutions shows that coating with a Sn-to-Ti molar ratio of 2% improves the efficiency of the photocatalytic performance of titanium dioxide, but excessive coverage decreases it. We interpret the observed behavior as due to a delicate balance of many competing factors. The formation of intimate interfaces guaranteed by the ILAR growth technique and a nearly optimal alignment of conduction band edges facilitate electron transfer, reducing electron–hole recombination rates. However, the valence hole transfer from TiO₂ to SnS reduces the oxidative potential, which is crucial in the degradation mechanism. Full article

Direct ink writing (DIW) of high-temperature thin-film sensors holds significant potential for monitoring extreme environments. However, existing high-temperature inks face a trade-off between cost and performance. This study proposes a SiCN/RuO₂/TiB₂ composite ceramic ink. The added TiB₂, after annealing in a high-temperature atmospheric environment, forms B₂O₃ glass, which synergizes with the SiO₂ glass phase formed from the SiCN precursor to effectively encapsulate RuO₂ particles. This enhances the film’s density and adhesion to the substrate, preventing RuO₂ volatilization at high temperatures. Additionally, the high conductivity of TiB₂ improves the film’s overall conductivity. Test results indicate that the SiCN/RuO₂/TiB₂ film exhibits high linearity from room temperature to 900 °C, high stability (resistance drift rate of 0.1%/h at 800 °C), and high conductivity (4410 S/m). As a proof of concept, temperature sensors and a heat flux sensor were successfully fabricated on a metallic hemispherical surface. Performance tests in extreme environments using high-power lasers and flame guns verified that the conformal thin-film sensor can accurately measure spherical temperature and heat flux, with a heat flux sensor response time of 53 ms. In conclusion, the SiCN/RuO₂/TiB₂ composite ceramic ink developed in this study offers a high-performance and cost-effective solution for high-temperature conformal thin-film sensors in extreme environments. Full article

In our work, a multi-layer topological insulator (TI) Bi₂Se₃ thin film was prepared by the chemical vapor deposition method (CVD), and its saturable absorption and damage characteristics were experimentally studied. The results show that when the wavelength is 1064 nm, the saturable absorption parameters of TI: Bi₂Se₃ film, including modulation depth α_s, non-saturable loss α_ns, and saturation power intensity I_sat, increase with the increase in film thickness, and the damage threshold is inversely proportional to the film thickness. The thicker the film layer, the lower the damage threshold. Among them, modulation depth α_s is up to 51.2%, minimum non-saturable loss α_ns is 1.8%, maximum saturation power intensity I_sat is 560.8 kW/cm², and the damage threshold is up to 909 MW/cm². The influence of the controllable thickness of TI: Bi₂Se₃ film on passive Q-switching and mode-locking performance of laser is discussed and analyzed when TI: Bi₂Se₃ film is prepared by the CVD method as a saturable absorber (SA). Finally, the performance of TI: Bi₂Se₃ thin film applied to nanosecond laser isolation at the 1064 nm band is simulated and analyzed. It has the natural advantage of polarization independence, and the maximum isolation can reach 16.4 dB. Full article

Magnetron-sputtered WS₂ composite thin films are solid lubricants with excellent performances. However, the low hardness of the WS₂ thin films necessitates the further improvement of their wear resistance. For this purpose, an effective strategy is to alternately deposit or code posit WS₂ and a hard phase, such as TiB₂, to form hard lubricant thin films. Herein, a TiB₂ thin film was prepared under the same conditions as those used for depositing the WS₂ thin film with a dense structure and excellent tribological properties. Because of the high deposition energy of high-power impulse magnetron sputtering (HiPIMS), the TiB₂ thin film possesses a dense structure and leather-like flat surface (hardness = 24.17 GPa). The friction coefficient of the film under different loads ranges between 0.6 and 0.8. The wear rate of the thin film increases with load, mainly because of fatigue wear and abrasive wear. Under high loads, obvious furrow-like wear marks are observed. At different sliding frequencies, except 8 Hz, the friction coefficient of the film ranges from 0.6 to 0.8. The main wear mode is fatigue wear, particularly at increasing sliding frequencies. Although the film possesses a relatively high friction coefficient, its wear resistance is excellent (minimum wear rate = 1.96 × 10⁻⁶ mm³/(N·m)). Full article

The exchange coupling between two ferromagnetic thin films, one with magnetically hard and the other with soft phases, separated by a thin non-magnetic layer, is studied. Nd-Fe-B/Ti/Fe thin film heterostructures were fabricated using DC magnetron sputtering on Si substrates, which were heated in situ at 650 °C using a house-built vacuum-compatible heater. The effect of the thickness of the Ti buffer layer and the annealing temperature on the formation of various phases of Nd-Fe-B was investigated. The effect of the thickness of the non-magnetic Ti spacer layer on the exchange coupling strength between the hard phase Nd-Fe-B ferromagnetic thin layer and the soft phase transition metal Fe layer was experimentally investigated. Hysteresis loops of multilayer thin films indicate an antiferromagnetic coupling was observed when the thickness of the spacer layer was 2 nm. This is within the range of an antiferromagnetic coupling calculation based on RKKY theory predictions. Full article

This article presents a wide-angle-scanning leaky-wave antenna (LWA) based on a composite right/left-handed (CRLH) transmission line. In contrast to traditional semiconductor elements, thin-film ferroelectric capacitors were implemented in the CRLH unit cells to enable electric beam scanning. The proposed CRLH LWA has a single-layer design without metalized vias and is compatible with PCB and thin-film technologies. To fabricate the CRLH LWA prototype, dielectric material substrates and thin-film ferroelectric capacitors were manufactured, and their characteristics were investigated. Double-sided metalized fluoroplast-4 reinforced with fiberglass with a permittivity of 2.5 was used as a substrate for CRLH LWA prototyping. A solid solution of barium strontium titanate (Ba${}_x$Sr${}_{1-x}$TiO${}_3$) with a composition of $x=0.3$ was used as a ferroelectric material in electrically tunable capacitors. The characteristics of the manufactured ferroelectric thin-film capacitors were measured at a frequency of 1 GHz using the resonance method. The capacitors have a tunability of about two and a quality factor of about 50. The antenna prototype consists of ten units with a total length of 1.25 wavelengths at the operating frequency of close to 2.4 GHz. The experimental results demonstrate that the main beam can be shifted within the range of −40 to 16 degrees and has a gain of up to 3.2 dB. The simple design, low cost, and excellent wide-angle scanning make the proposed CRLH LWA viable in wireless communication systems. Full article

Pyroelectric materials, are those materials with the property that in the absence of any externally applied electric field, develop a built-in spontaneous polarization in their unit cell structure. They are regarded as ideal detector elements for infrared applications because they can provide fast response time and uniform sensitivity at room temperature over all wavelengths. Crystals of the perovskite Lead Titanate (PbTi${\mathrm{O}}_3$) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and Micro-electromechanical systems (MEMS) devices. However, the preparation of large perfect, and pure single crystals of PbTi${\mathrm{O}}_3$ is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. A number of thin film fabrication techniques have been proposed to overcome these inadequacies, among which, magnetron sputtering has demonstrated many potentials. By addressing these aspects, the review article aims to contribute to the understanding of the challenges in the field of pyroelectric materials, highlight potential solutions, and showcase the advancements and potentials of pyroelectric perovskite series including PbZrTiO₃ (PZT), ${\mathrm{P}\mathrm{b}}_{\mathrm{x}}{\mathrm{C}\mathrm{a}}_{1-\mathrm{x}}$ (PZN-PT), etc. for which PbTi${\mathrm{O}}_3$ is the end member. The review is presented in two parts. Part 1 focuses on material aspects, including preparation methods using magnetron sputtering and material characterization. We take a tutorial approach to discuss the progress made in epitaxial growth of lead titanate-based ceramics prepared by magnetron sputtering and examine how processing conditions may affect the crystalline quality of the growing film by linking to the properties of the substrate/buffer layer, growth substrate temperature, and the oxygen partial pressure in the gas mixture. Careful control and optimization of these parameters are crucial for achieving high-quality thin films with desired structural and morphological characteristics. Full article