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Authors = Jerry R. Meyer

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19 pages, 5362 KiB  
Article
Interband Cascade Photonic Integrated Circuits on Native III-V Chip
by Jerry R. Meyer, Chul Soo Kim, Mijin Kim, Chadwick L. Canedy, Charles D. Merritt, William W. Bewley and Igor Vurgaftman
Sensors 2021, 21(2), 599; https://doi.org/10.3390/s21020599 - 16 Jan 2021
Cited by 18 | Viewed by 4071
Abstract
We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be [...] Read more.
We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package. Full article
(This article belongs to the Special Issue Mid-Infrared Sensors and Applications)
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58 pages, 8781 KiB  
Review
The Interband Cascade Laser
by Jerry R. Meyer, William W. Bewley, Chadwick L. Canedy, Chul Soo Kim, Mijin Kim, Charles D. Merritt and Igor Vurgaftman
Photonics 2020, 7(3), 75; https://doi.org/10.3390/photonics7030075 - 15 Sep 2020
Cited by 134 | Viewed by 14693
Abstract
We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for [...] Read more.
We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for future improvements. Such device properties as the threshold current and power densities, continuous-wave output power, and wall-plug efficiency are compared with those of the quantum cascade laser. Newer device classes such as ICL frequency combs, interband cascade vertical-cavity surface-emitting lasers, interband cascade LEDs, interband cascade detectors, and integrated ICLs are reviewed for the first time. Full article
(This article belongs to the Section Lasers, Light Sources and Sensors)
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13 pages, 6890 KiB  
Article
Multi-Spectral Quantum Cascade Lasers on Silicon With Integrated Multiplexers
by Eric J. Stanton, Alexander Spott, Jon Peters, Michael L. Davenport, Aditya Malik, Nicolas Volet, Junqian Liu, Charles D. Merritt, Igor Vurgaftman, Chul Soo Kim, Jerry R. Meyer and John E. Bowers
Photonics 2019, 6(1), 6; https://doi.org/10.3390/photonics6010006 - 24 Jan 2019
Cited by 13 | Viewed by 6182
Abstract
Multi-spectral midwave-infrared (mid-IR) lasers are demonstrated by directly bonding quantum cascade epitaxial gain layers to silicon-on-insulator (SOI) waveguides with arrayed waveguide grating (AWG) multiplexers. Arrays of distributed feedback (DFB) and distributed Bragg-reflection (DBR) quantum cascade lasers (QCLs) emitting at ∼4.7 µm wavelength are [...] Read more.
Multi-spectral midwave-infrared (mid-IR) lasers are demonstrated by directly bonding quantum cascade epitaxial gain layers to silicon-on-insulator (SOI) waveguides with arrayed waveguide grating (AWG) multiplexers. Arrays of distributed feedback (DFB) and distributed Bragg-reflection (DBR) quantum cascade lasers (QCLs) emitting at ∼4.7 µm wavelength are coupled to AWGs on the same chip. Low-loss spectral beam combining allows for brightness scaling by coupling the light generated by multiple input QCLs into the fundamental mode of a single output waveguide. Promising results are demonstrated and further improvements are in progress. This device can lead to compact and sensitive chemical detection systems using absorption spectroscopy across a broad spectral range in the mid-IR as well as a high-brightness multi-spectral source for power scaling. Full article
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10 pages, 4476 KiB  
Article
Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
by Alexander Spott, Jon Peters, Michael L. Davenport, Eric J. Stanton, Chong Zhang, Charles D. Merritt, William W. Bewley, Igor Vurgaftman, Chul Soo Kim, Jerry R. Meyer, Jeremy Kirch, Luke J. Mawst, Dan Botez and John E. Bowers
Photonics 2016, 3(2), 35; https://doi.org/10.3390/photonics3020035 - 2 Jun 2016
Cited by 37 | Viewed by 7944
Abstract
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated [...] Read more.
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for mid-infrared (MIR) silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon has been reported to date. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-on-insulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100 °C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning. Full article
(This article belongs to the Special Issue Quantum Cascade Lasers - Advances and New Applications)
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