Sublayer-Enhanced Growth of Highly Ordered Mn5Ge3 Thin Film on Si(111)

Yakovlev, Ivan; Tarasov, Ivan; Lukyanenko, Anna; Rautskii, Mikhail; Solovyov, Leonid; Sukhachev, Alexander; Volochaev, Mikhail; Efimov, Dmitriy; Goikhman, Aleksandr; Bondarev, Ilya; Varnakov, Sergey; Ovchinnikov, Sergei; Volkov, Nikita; Tarasov, Anton

doi:10.3390/nano12244365

Open AccessArticle

Sublayer-Enhanced Growth of Highly Ordered Mn₅Ge₃ Thin Film on Si(111)

by

Ivan Yakovlev

¹

,

Ivan Tarasov

^1,*,

Anna Lukyanenko

^1,2

,

Mikhail Rautskii

¹,

Leonid Solovyov

³,

Alexander Sukhachev

¹,

Mikhail Volochaev

^1,4,

Dmitriy Efimov

⁵,

Aleksandr Goikhman

⁵,

Ilya Bondarev

^1,4,

Sergey Varnakov

^1,4

,

Sergei Ovchinnikov

^1,2

,

Nikita Volkov

¹ and

Anton Tarasov

^1,2,*

¹

Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia

²

Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 660041 Krasnoyarsk, Russia

³

Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia

⁴

Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russia

⁵

REC «Functional Nanomaterials», Immanuel Kant Baltic Federal University, 236016 Kaliningrad, Russia

^*

Authors to whom correspondence should be addressed.

Nanomaterials 2022, 12(24), 4365; https://doi.org/10.3390/nano12244365

Submission received: 15 November 2022 / Revised: 30 November 2022 / Accepted: 6 December 2022 / Published: 7 December 2022

(This article belongs to the Collection Magnetic Nanostructured Materials: Synthesis, Characterization and Their Cutting-Edge Applications)

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Abstract

Mn₅Ge₃ epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth mode. This mode has been stabilized by changing the ratio of the Mn and Ge evaporation rate from the stoichiometric in the buffer layer. Highly ordered Mn₅Ge₃ film has two azimuthal crystallite orientations, namely Mn₅Ge₃ (001) [1-10] and Mn₅Ge₃ (001) [010] matching Si(111)[-110]. Lattice parameters derived a (7.112(1) Å) and c (5.027(1) Å) are close to the bulk values. Considering all structural data, we proposed a double buffer layer model suggesting that all layers have identical crystal structure with P6₃/mcm symmetry similar to Mn₅Ge₃, but orientation and level of Si concentration are different, which eliminates 8% lattice mismatch between Si and Mn₅Ge₃ film. Mn₅Ge₃ film on Si(111) demonstrates no difference in magnetic properties compared to other reported films. T_C is about 300 K, which implies no significant excess of Mn or Si doping. It means that the buffer layer not only serves as a platform for the growth of the relaxed Mn₅Ge₃ film, but is also a good diffusion barrier.

Keywords: manganese germanide; thin film; MBE; ferromagnetism; sublayer

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MDPI and ACS Style

Yakovlev, I.; Tarasov, I.; Lukyanenko, A.; Rautskii, M.; Solovyov, L.; Sukhachev, A.; Volochaev, M.; Efimov, D.; Goikhman, A.; Bondarev, I.; et al. Sublayer-Enhanced Growth of Highly Ordered Mn₅Ge₃ Thin Film on Si(111). Nanomaterials 2022, 12, 4365. https://doi.org/10.3390/nano12244365

AMA Style

Yakovlev I, Tarasov I, Lukyanenko A, Rautskii M, Solovyov L, Sukhachev A, Volochaev M, Efimov D, Goikhman A, Bondarev I, et al. Sublayer-Enhanced Growth of Highly Ordered Mn₅Ge₃ Thin Film on Si(111). Nanomaterials. 2022; 12(24):4365. https://doi.org/10.3390/nano12244365

Chicago/Turabian Style

Yakovlev, Ivan, Ivan Tarasov, Anna Lukyanenko, Mikhail Rautskii, Leonid Solovyov, Alexander Sukhachev, Mikhail Volochaev, Dmitriy Efimov, Aleksandr Goikhman, Ilya Bondarev, and et al. 2022. "Sublayer-Enhanced Growth of Highly Ordered Mn₅Ge₃ Thin Film on Si(111)" Nanomaterials 12, no. 24: 4365. https://doi.org/10.3390/nano12244365

APA Style

Yakovlev, I., Tarasov, I., Lukyanenko, A., Rautskii, M., Solovyov, L., Sukhachev, A., Volochaev, M., Efimov, D., Goikhman, A., Bondarev, I., Varnakov, S., Ovchinnikov, S., Volkov, N., & Tarasov, A. (2022). Sublayer-Enhanced Growth of Highly Ordered Mn₅Ge₃ Thin Film on Si(111). Nanomaterials, 12(24), 4365. https://doi.org/10.3390/nano12244365

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Sublayer-Enhanced Growth of Highly Ordered Mn₅Ge₃ Thin Film on Si(111)

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