Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods
Abstract
:1. Introduction
2. Microwave-Excited Surface Wave Plasma CVD (MW-SWP CVD)
3. Growth of Graphene and 2D Materials
3.1. Growth of Graphene Films on Catalytic Substrates
3.2. Direct Growth of Graphene on Arbitrary Substrates
3.3. Growth of Vertically-Oriented Graphene
3.4. Doping of Graphene with Heteroatoms
3.5. Growth of Boron Nitride (BN) Related Materials
4. Future Prospects of MW-SWP CVD for 2D Materials Synthesis
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Methods | Graphene | Hexagonal Boron Nitride (hBN) | Transition Metal Dichalcogenides (TMDCs) Layers |
---|---|---|---|
Pulsed-Laser Deposition (PLD) | Monolayer/Bilayer/Fewlayers (Catalytic growth; Temperature: 300~1200 °C) | Monolayer/Fewlayers (Catalytic & noncatalytic growth; Temperature: 200~1000 °C) | Fewlayers/Multilayers (Noncatalytic growth; Temperature: 300~800 °C) |
Magnetron Sputtering | Monolayer/Fewlayers(Catalytic growth; Temperature: 300~1000 °C) | Fewlayers/Multilayers (Catalytic growth & noncatalytic growth; Temperature: 400~1000 °C) | Monolayer/Fewlayers (Noncatalytic growth; Temperature: 300~800 °C) |
Molecular Beam Epitaxy (MBE) | Monolayer/Bilayer/Fewlayers (Catalytic growth; Temperature: 500~1000 °C) | Monolayer/Bilayer/Fewlayers (Catalytic growth; Temperature: 400~1000 °C) | Monolayer/Fewlayers (Noncatalytic growth; Temperature: 600~1000 °C) |
Thermal Chemical Vapor Deposition (CVD) | Monolayer/Bilayer/Fewlayers (Catalytic growth; Temperature: >1000 °C) | Monolayer/Bilayer/Fewlayers (Catalytic growth; Temperature: >1000 °C) | Monolayer/Bilayer/Fewlayers (Noncatalytic growth; Temperature: 600~1000 °C) |
Plasma Chemical Vapor Deposition (CVD) | Monolayer/Bilayer/Fewlayers (Catalytic & noncatalytic growth; Low temperature growth) | Monolayer/Fewlayers/Multilayers (Catalytic & noncatalytic growth; Low temperature growth) | Monolayer/Fewlayers/Multilayers (Noncatalytic growth; Low temperature growth) |
Dispersion of Solution (Graphene Oxide Solution) | Chemical Vapor Deposition (CVD) | |||
---|---|---|---|---|
Thermal CVD | Plasma CVD | |||
RF Plasma CVD | Microwave-Excited Surface Wave Plasma CVD | |||
Formation temperature of films | Room temperature (°C) | ~1100 °C | 400~1000 °C | 200~700 °C |
Layer thickness | Monolayer~Few-layers * Assembly of graphene layers | Monolayer~Few-layers | Monolayer~Few-layers * Lateral growth * Vertical-oriented growth | Monolayer~Few-layers * Lateral growth * Vertical-oriented growth |
Film formation area | Meter scale (~1 m) | ~0.1 m | Meter scale (~1 m) | Meter scale (~1 m) |
Features | Room temperature film formation | High quality; Controllable growth of monolayer/bilayers | Low temperature deposition | Low temperature deposition, direct film formation on various substrates (independent of catalytic substrates) |
Applications | Coating materials, composites, membranes, sensors, energy storage/conversion devices etc. | Electronic devices, sensors, energy storage/conversion devices, oxidation resistance barriers etc. | Electronic devices, sensors, membranes, energy storage/conversion devices, encapsulation layer etc. | Electronic devices, sensors, membranes, energy storage/conversion devices, oxidation resistance barriers, encapsulation layer etc. |
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Kalita, G.; Umeno, M. Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods. AppliedChem 2022, 2, 160-184. https://doi.org/10.3390/appliedchem2030012
Kalita G, Umeno M. Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods. AppliedChem. 2022; 2(3):160-184. https://doi.org/10.3390/appliedchem2030012
Chicago/Turabian StyleKalita, Golap, and Masayoshi Umeno. 2022. "Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods" AppliedChem 2, no. 3: 160-184. https://doi.org/10.3390/appliedchem2030012