1. Introduction
Commercial thermal mass flow sensors (TMFS) are a subcategory of a wide variety of commercial flow sensors with different measurement principles to detect the flow rates of gases. This article focuses on the thermal measurement principle, as it leads to a simple and robust setup and can be realized with low-cost components [
1]. TMFS elements are mainly used as insertion sensors with packaged sensor elements, capillary TMFS, where the gas flow is measured in a by-pass parallel to the actual tube [
2], tubes with the sensor elements located on the outside of the tube, and inline TMFS, where the sensor elements are extended into the tube and into the medium. The latter TMFS will be the focus of this work, since the sensor elements are mostly fabricated on thin substrates with thin film technology, which is achieved using Ensinger Microsystems Technology (EMST).
TMFS are available as uni- and bi-directional sensor elements and operate in different modes of sensing: 1. Hot-wire and hot-film, where the resistance of a heating element is changed by the cooling effect caused by the flow [
3]. 2. Time-of-flight sensing, where the time difference between a change in the heating power of a heater element and the change in resistance of the sensor element located further upstream is measured [
3]. 3. Calorimetric sensing, where the setup consists of a heater element and one or two temperature sensor elements for uni- or bi-directional detection, respectively [
3]. The calorimetric principle was chosen for this work because it can be simply implemented with EMST. This is why this principle is explained in more detail. The calorimetric measurement principle operates as follows: The heat generated by a heater is sensed by the temperature sensor(s), both located on a substrate. In the case of a bi-directional TMFS and no flow, both temperature sensors sense the same temperature. If a flow in one direction is present, the temperature sensors sense a temperature difference, as can be seen in
Figure 1. The result can be given as a differential signal. The differential signal is positive in the example shown, and will be negative if the flow is in a reverse direction. For a uni-directional TMFS, the temperature sensor will sense temperature differences correlated to a flow. A variant is to operate the TMFS with an additional controller as a constant temperature anemometer (CTA).
Different technologies are currently used to manufacture such TMFS elements. There are examples for semiconductor technology with a silicon substrate [
4,
5] with an integrated polyimide membrane [
4] or a released polyimide membrane [
5], heater and sensor structures made with thin film technology, and photolithography and chemical etching on glass or ceramic substrates [
6,
7,
8]. For the temperature sensors, thermopiles using the thermoelectric effect [
4,
5] or thin film resistors made from materials with a high temperature coefficient of resistance (TCR) and with well-defined temperature characteristics, e.g., platinum [
7,
8], are used. The advantage of thermo-resistive sensor elements is their easier fabrication process, especially when not using semiconductor technology, compared to thermopiles, due to their more conventional materials [
3]. However, the sensitivity for thermopiles is higher [
3]. For ease of production, the same material is used for the temperature sensors and the heater, with a relatively high TCR, e.g., platinum [
7,
8]. Although, these TMFS elements are widespread, the shortcomings of the mentioned TMFS elements are their limited choice in materials for the substrates, heater, and temperature sensors, since the technologies used are mostly limited to certain materials.
For an ideal sensor element, a substrate material with a low thermal conductivity is mandatory. This would prevent a parasitic heat flow through the substrate from the heater to the temperature sensor(s). The sensor element would have a temperature sensor made of a material with a high TCR, leading to a large change in resistance with temperature change, and a heater made of a material with a low TCR, because its resistivity would then be constant at different heater temperatures. To get close to an ideal sensor element, it is necessary to choose alternative fabrication technologies and materials compared to already existing commercial sensor elements.
A sensor element requires a proper sensor electronic. Most TMFS use a Wheatstone bridge configuration to provide a voltage, like it is shown for a TMFS in [
9]. The resulting bridge voltage is then digitized and correlated with the flow. In [
10] it was already shown that TMFS based on time measurements are possible. Therefore, a circuit based on a time-to-digital-converter (TDC) was used, which measures the sensor output signals via discharge time measurement of RC-circuits with picoseconds resolution. Time is a fundamental base unit and therefore part of the international system of units (SI) by the definition of the second and can be measured more accurately than a voltage.
To overcome the shortcomings of the sensor element, this article will focus on TMFS elements based on EMST, which offer the possibility for low-cost TMFS and a broader variety in material choice. The technology is based on a lithography-free polymer wafer process [
11] and, therefore, does not need any cleanroom technology. Furthermore, EMST is a low-cost technology with scalable processes, which makes it favorable for industrial production. First, the results of a TMFS sensor made in this technology were presented in [
10], where a TMFS based on a PEEK substrate with nickel as the temperature sensor material and nickel–chromium as the heater material was presented. According to [
12], polymer-based TMFS have great potential in aerospace and geothermal applications due to their resilience to oxidation effects and good strength–weight ratios.
Furthermore, a commercial TMFS, namely the FS2 of IST AG [
7], which is a typical example for a sensor element integrated in industrial applications, is used for comparison. Compared to commercially available sensor elements based on silicon, which are available as bare dies, FS2 sensor elements can be handled more easily. The FS2 comes on a ceramic substrate with thin film platinum heater and temperature sensors manufactured using physical vapor deposition and lithography.
Another TMFS approach based on the work of [
1] on a semi-flex printed circuit board (PCB) with the readout circuit located on the rigid part of the PCB is used in addition. This discrete built sensor uses off-the-shelf surface mount device (SMD) components, with a resistor for the heater and thermistors for sensing the temperatures mounted on a flex-rigid PCB, which makes it even lower cost and variable in terms of the off-the-shelf components being used. The whole sensor can be fabricated using PCB technology, including picking and placing the SMD components and a reflow soldering process.
This article presents the fabrication process of a TMFS element based on EMST, with the goal of achieving a nearly ideal sensor element with respect to material choices. A readout and control circuit based on a TDC is shown, and the measurement results with this circuit and an EMST sensor element are presented as a proof of concept. Furthermore, the results are compared to a sensor with a commercial sensor element FS2 from IST AG and the discrete built sensor connected to a similar TDC-based readout and control circuit.
2. Materials and Methods
This chapter gives insights into the layout of the sensor element based on EMST, including the complete fabrication process, the FS2, and the discrete built sensor element, for comparison to the EMST-based sensor element. We propose and present a readout and control circuit based on discharge time measurements with picosecond (ps) resolutions. Each resistive (R) temperature sensor on the flow sensor element is consecutively connected to a capacitor (C) to form an RC circuit whose discharge time is measured with ps resolution and, thus, is traceable to the second, defined as a fundamental base unit of the SI. The result of each discharge time measurement is given in ticks of a reference clock in arbitrary units (a.u.). For the following analysis, the calculated difference in the discharge time measurements between the two resistive temperature sensors on each flow sensor element is used as the sensor signal. In addition, the readout and control circuit allows us to vary the temperature of the resistive heater element of the flow sensor via a programmable current source, which is controlled via pulse width modulation (PWM).
2.1. Sensor Element Based on EMST
The sensor element based on EMST was inspired by the FS2
TM by IST AG as a bi-directional TMFS. A substrate size of 7 mm x 5 mm x 1.15 mm was chosen. As the substrate, TECACOMP
® PEEK LDS black was used, and injection compression molding was executed by Ensinger GmbH (Nufringen, Germany). The characteristics of TECACOMP
® PEEK LDS black can be found elsewhere [
13]. PEEK has good chemical resistance, temperature stability, and a low thermal conductivity of 0.5 W/(m*K) through-plane and 1.7 W/(m*K) in-plane, which makes it a suitable material for TMFS in harsh environments. The sensor element consists of a heater in the middle and two surrounding temperature sensor elements, as depicted in
Figure 2. For the heater, Ni80Cr20 was chosen, as it shows a low TCR. For bulk Ni80Cr20, the literature reports a TCR of about 50–150 ppm/K. For the temperature sensors, nickel was chosen, as it has a high TCR. The literature reports a TCR of about 6600 ppm/K for bulk nickel. The characteristic values of the sensor element materials are summarized in
Table 1. The resistance of the heater was designed to have 100 Ω at 23 °C. For the temperature sensors, the resistors were designed to have 1 kΩ at 23 °C. Signal tracks connecting the resistors are made from copper, nickel, and gold, and end up in the lower part of the substrate where castellated vias form the electrical connection to the readout electronics.
A second sensor element based on EMST was reduced in thickness by milling it from the backside to a thickness of about 500 µm underneath the sensing area, as proposed in [
10].
Figure 3 shows the fabrication process, representative of one sensor element. In practice, the complete fabrication process is performed on a 4″ wafer with 174 sensor elements. The fabrication process starts with injection compression molding of TECACOMP
® PEEK LDS black wafers. The nickel mold tool insert used for EMST has features that form small channels with a height of about 13 µm and a width of 120 µm that act as the low resistance traces and the resistors of the sensor element. The mold tool insert was milled on a diamond milling machine. The resulting PEEK wafer was processed using the LPKF-LDS
® process. Laser direct structuring (LDS) has the advantage of structuring a substrate selectively. The substrate material contains laser activatable additives. To activate the surface for the metallization of the signal tracks, a nanosecond-pulsed IR laser (1064 nm) by LPKF Laser & Electronics SE was used. Via holes were drilled with the very same laser, simultaneously activating their surfaces. Afterwards, the wafer with the laser structured surface was immersed into an electroless copper electrolyte. The laser-activated surface in the channels and the laser-drilled holes were plated with copper (Cu), forming the low resistance tracks and the castellated vias. For the desired surface finish, the wafer was immersed into electroless nickel (Ni) and gold (Au), resulting in an overall layer thickness of 8 µm/5 µm/0.1 µm accordingly. In
Figure 3, the Cu/Ni/Au plating of the tracks are marked in yellow. In the next two steps, 120 nm of nickel for the temperature sensors and nickel–chromium for the heater were partially applied to the wafer using physical vapor deposition (PVD) with a magnetron sputtering system. Both layers are only required locally within the channels of the wafer substrate. Therefore, shadow masks with 120 µm thickness with openings for the temperature sensors and the heater element, respectively, were designed and positioned on top of the wafer during the sputtering process. After the sputtering step, a chemical-mechanical polishing process was applied to remove any excess material from the top surface of the wafer so that the resistor material remained only in the channels to form the resistive elements. Finally, the wafer was diced to release the single-sensor elements from the wafer.
2.2. Sensor Element FS2
The commercial sensor element FS2 [
7] with our proposed readout and control circuit was used for comparison. The FS2 has a zirconium oxide substrate with a thickness of 0.2 mm. Zirconium oxide has a thermal conductivity of 2.5–3 W/(m*K) [
14]. All resistors—that is, the heater and temperature sensors on the FS2—are made from platinum with thin film technology. The heater resistance is specified with 34 Ω ± 10% at 25 °C, while the temperature sensors are specified with 425 Ω ± 10% at 25 °C. Platinum has a TCR of 3850 ppm/K (−200 °C to +600 °C) [
20] (
Table 1).
2.3. Sensor Element with Discrete Components
As a second comparison, a sensor element with a conventional SMD resistor for the heater and two SMD thermistors for temperature sensing, as well as our proposed readout and control circuit, were used. This TMFS was already presented in [
21], and the thermistor series NCP15X used was found to show good long-term stability [
22]. Therefore, a variant of the readout circuit with flex-rigid PCB technology was built. The discrete components were placed on the flexible part at one end of the PCB. As the heater, a metal film SMD component ERA-3AEB1400V [
16] was chosen. The resistor has a specified resistance of 140 Ω and a specified TCR of ±25 ppm/K. As temperature sensors, two thermistors (NCP15XW222E03RC) [
17] were placed on either side of the heater for bi-directional measurement. The negative temperature coefficient (NTC) resistors are specified to have 2.2 kΩ at 25 °C and a B-constant of 3950 K (
Table 1).
2.4. Readout and Control Circuit
The readout and control circuit depicted in
Figure 4 is based on a dedicated integrated circuit (IC), namely PCap01 (ScioSense B.V., Eindhoven, The Netherlands). The IC was already used and described in detail in [
21]. Besides the inputs for capacitive sensor elements, a Capacitance-to-Digital frontend, the IC features inputs for resistive sensor elements, a Resistance-to-Digital frontend, as well as two PWM outputs.
Figure 4 shows the schematic of the circuit with the IC and its associated passive components. For communication with a microcontroller, the SPI interface of the IC was used; hence, the input IIC_EN is tied to the ground. The clock for the PCap01 was provided using a 4 MHz ceramic resonator.
The PCap01 contains a Time-to-Digital-Converter (TDC) that measures the discharge time of an RC-circuit with picosecond resolution in increments of a high frequency clock. Compared to an analog-to-digital-converter, which is based on a voltage measurement, the measurement of a TDC can be traced back to time, which is a fundamental base unit of the SI by the definition of the second. The temperature sensors of the TMFS are connected to the IC and, furthermore, to the capacitor C2, forming the RC-circuit. Hence, with the alteration of the connected resistors to the capacitor, all temperature measurements share the same capacitor, making its influence negligible in a differential measurement. Nonetheless, a capacitor with a C0G/NP0 dielectric was chosen.
On the left of
Figure 4, the flow sensor element with its heater and two temperature sensors is depicted. R6, an additional thermistor, serves as a temperature sensor measuring the environment.
The PWM output of the PCap01 is used to form a programmable current source, shown on the bottom of
Figure 4. At the source of Q2, the heater of the thermal flow sensor element is connected, with its other side tied to the +5 V supply. By controlling the duty cycle of the PWM, the current through the heater, and therefore its temperature, can be set.
To operate the PCap01, a firmware and a configuration are required. The firmware reads the different raw counter values in increments, an internal compensation measurement, the internal polysilicon resistor with a TCR of −1.1 ppm/K, both temperature sensors of the thermal flow sensor elements, as well as the thermistor for the environment. It further sets the PWM control register PULSE0 by reading the value in the parameter register PARA0, which can be written using a microcontroller or personal computer (PC) via the evaluation board.
The configuration triggers a measurement using a sequence timer, which is set to 24.4 Hz. The cycle time for the resistance measurement was set to 280 µs.
Figure 5 shows the combined readout and control circuit with the respective sensor elements, (a) EMST, (b) EMST with reduced substrate thickness, (c) FS2, and (d) flex-rigid PCB with discrete resistors as the heater and NTCs as the temperature sensors. The EMST and FS2 sensor elements were attached to the readout circuit using castellated vias.
2.5. Test Setup
For characterization, the sensors (sensor element and readout circuit) were inserted into pneumatic T-fittings and sealed with hot glue. The sensor element itself is extended into the tube with the airflow, which makes the measurement invasive.
Figure 6a shows the test setup with the pneumatic T-fitting in the middle of the scheme. The T-fitting was connected at both ends with tubes with an inner diameter of 4 mm. On one side, the tube was connected to the in-house compressed air net. The pressure of the compressed air net was adjusted at its outlet to create different flow rates. The tube on the other side of the T-fitting was connected to a reference sensor SFM3013-300-CL from Sensirion (Stäfa, Switzerland), which itself was left open on the other side in order to release the air to the environment. The reference sensor comes with a resolution of 16 bit, an accuracy of ±2%, and a noise level of ±1% in the used range of flow rates < 200 SLPM. In the setup, the sensor under test is located in the middle and was characterized at different flow rates.
Figure 6b shows a photo of the experimental test setup with the TMFS inside the pneumatic T-fitting on the right and the SFM3013-300-CL on the left. To adapt the inner diameter of the tubes to the inner diameter of the SFM3013-300-CL reference sensor, a 1.47 m long wound tube with slowly increasing diameter was designed and manufactured.
Two series of measured data were recorded: one in forward flow direction and one in backward flow direction. In both cases, the resistive structures were facing upwards. As a convention, the forward (FW) direction is defined as the calculated positive signal between temperature sensor 1 and 2, while the backward (BW) direction is defined as the negative signal.
The readout electronics was connected to a PCap01 evaluation board via the SPI interface to load firmware and configurations into the IC. The evaluation board (marked as µC in
Figure 6a) itself was connected to a PC. The operation on the PC was performed using the graphical user interface (GUI) that came with the evaluation board. The software displays measured samples in a graph and writes the results into a file. To set the heater power, a laboratory power supply (HAMEG Instruments, HM7042-5, Munich, Germany) was connected to the control circuit with the voltage set to 5 V. Via PWM, the current flowing through the heater, and thus its temperature, was set. The PWM can be set in the GUI and was varied from 0 to 120 in steps of 10 and in addition to the highest value of 127. For each step, about 500 samples were taken. Thereupon, the PWM was manually increased. The SFM3013-300-CL was connected to a microcontroller via the I
2C interface. The reference sensor output was read and visualized with a GNU Octave script.
For each measurement series, firstly, the flow rate was adjusted at the compressed air net outlet until the reference sensor output showed the desired flow rate. This flow rate was then tracked over the whole measurement to ensure that the flow rate was constant. At every adjusted constant flow rate, the sensor signals of each sensor were measured with varying heater settings (PWM settings). After every 500 captured samples, the PWM was increased manually to the next value. After this, the measurement was stopped, a new flow rate was set, and the measurement series with varying PWM settings was repeated.
5. Conclusions
The Ensinger Microsystems Technology (EMST) process chain was presented. Two sensor elements with different substrate thicknesses based on EMST were investigated, the first one with a thickness of 1.15 mm and the second one with reduced thickness of 0.5 mm underneath the sensing area. The overall advantage of EMST is a broader choice in materials for the substrate, heater, and temperature sensors. Hence, PEEK was used for the substrate, nickel–chromium with low TCR was used for the heater, and nickel with a high TCR was used for the temperature sensors.
A readout and control circuit was presented that is based on discharge time measurement with picosecond resolution and does not necessarily need a control loop to be operated. All sensor elements were connected to such a readout electronic. Measurements with the readout circuit in combination with the four different sensor elements showed that these sensors can detect changes in flow rate, although with different light-off performance. The heater powers of the EMST sensor elements over voltages were compared to the commercial sensor element FS2 and a sensor element on a flex-rigid PCB with discrete components. The power of the heater at the sensor element was varied by changing the PWM of a programmable current source. The EMST and the discrete built sensor elements showed better performance in the correlation of heater power and voltage compared to FS2 due to a more suitable heater material with a smaller TCR, namely nickel–chromium. Measurements were performed at different flow rates by altering the pressure of a compressed air net and measuring the flow rate with a reference sensor SFM3013-300-CL from Sensirion, while the sensor elements were inserted into a pneumatic T-fitting and sealed with hot glue. As proposed in [
10], an improvement in the sensitivity of the EMST sensor elements with reduced thicknesses was successfully accomplished. These results were achieved without further process optimization of the EMST process chain and without trimming the resistive structures or the selection of sensor elements by their performance. Reducing the thickness of the substrate even further can further increase its sensitivity. In its current state, EMST sensor elements are suitable for flow rates ≥ 20 SLPM. Suggestions for optimizing the fabrication process include a consideration of the material shrinkage and improving the LDS process, which will result in a better reproducibility of the resistive elements and further reducing the substrate’s thickness to increase sensitivity even further. The EMST sensor elements do not have any passivation layer yet. This might be another improvement, which could help to obtain stable resistance and TCRs over time, and needs to be investigated in further research. If these limitations are overcome, the TMFS based on EMST, in combination with the presented readout and control circuit, will find usage in applications with harsh environments, as well as medical, biological, or chemical applications, with the necessity of high-resolution flow measurements.