Chen, K.-H.; Kao, M.-C.; Wang, Y.-C.; Chen, H.-C.; Kao, C.-C.H.
Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices. Eng. Proc. 2025, 108, 38.
https://doi.org/10.3390/engproc2025108038
AMA Style
Chen K-H, Kao M-C, Wang Y-C, Chen H-C, Kao C-CH.
Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices. Engineering Proceedings. 2025; 108(1):38.
https://doi.org/10.3390/engproc2025108038
Chicago/Turabian Style
Chen, Kai-Huang, Ming-Cheng Kao, Yao-Chin Wang, Hsin-Chin Chen, and Chin-Chueh Huang Kao.
2025. "Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices" Engineering Proceedings 108, no. 1: 38.
https://doi.org/10.3390/engproc2025108038
APA Style
Chen, K.-H., Kao, M.-C., Wang, Y.-C., Chen, H.-C., & Kao, C.-C. H.
(2025). Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices. Engineering Proceedings, 108(1), 38.
https://doi.org/10.3390/engproc2025108038